PIC16F688
14.7 DC Characteristics: PIC16F688 -I (Industrial), PIC16F688 -E (Extended)
Standard Operating Conditions (unless otherwise stated)
DC CHARACTERISTICS
Operating temperature
-40°C ≤ TA ≤ +85°C for industrial
-40°C ≤ TA ≤ +125°C for extended
Param
Sym
No.
Characteristic
Min
Typ†
Max Units
Conditions
D100
IULP
Ultra Low-Power Wake-up
Current
—
200
—
nA
Capacitive Loading Specs
on Output Pins
D100
COSC2 OSC2 pin
—
—
—
—
15*
50*
pF In XT, HS and LP modes when
external clock is used to drive
OSC1
D101
D120
CIO
ED
All I/O pins
pF
Data EEPROM Memory
Byte Endurance
Byte Endurance
VDD for Read/Write
100K
10K
1M
100K
—
—
—
E/W -40°C ≤ TA ≤ +85°C
E/W +85°C ≤ TA ≤ +125°C
D120A ED
D121
VDRW
VMIN
5.5
V
Using EECON1 to read/write
VMIN = Minimum operating
voltage
D122
D123
TDEW
Erase/Write Cycle Time
—
5
6
ms
TRETD Characteristic Retention
40
—
—
Year Provided no other specifications
are violated
D124
TREF
Number of Total Erase/Write
Cycles before Refresh(4)
1M
10M
—
E/W -40°C ≤ TA ≤ +85°C
Program Flash Memory
Cell Endurance
D130
EP
10K
1K
100K
10K
—
—
—
E/W -40°C ≤ TA ≤ +85°C
E/W +85°C ≤ TA ≤ +125°C
D130A ED
Cell Endurance
D131
VPR
VDD for Read
VMIN
5.5
V
VMIN = Minimum operating
voltage
D132
D133
D134
VPEW
TPEW
VDD for Erase/Write
4.5
—
—
2
5.5
2.5
—
V
Erase/Write cycle time
ms
TRETD Characteristic Retention
40
—
Year Provided no other specifications
are violated
*
These parameters are characterized but not tested.
†
Data in ‘Typ’ column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 4: See Section 9.0 “Data EEPROM And Flash Program Memory Control” for additional information.
2004 Microchip Technology Inc.
Preliminary
DS41203B-page 143
MICROCHIP [ MICROCHIP ]
