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PIC16F688-I/P 参数 Datasheet PDF下载

PIC16F688-I/P图片预览
型号: PIC16F688-I/P
PDF下载: 下载PDF文件 查看货源
内容描述: 14引脚基于闪存的8位CMOS微控制器采用纳瓦技术 [14-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology]
分类和应用: 闪存微控制器和处理器外围集成电路光电二极管时钟
文件页数/大小: 174 页 / 2918 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC16F688  
14.5 DC Characteristics: PIC16F688-E (Extended)  
Standard Operating Conditions (unless otherwise stated)  
Operating temperature -40°C TA +125°C for extended  
DC Characteristics  
Conditions  
Note  
Param  
No.  
Device Characteristics  
Min  
Typ†  
Max Units  
VDD  
D020E Power-down Base  
0.00099 TBD  
0.0012 TBD  
0.0029 TBD  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
2.0  
3.0  
5.0  
2.0  
3.0  
5.0  
3.0  
5.0  
2.0  
3.0  
5.0  
2.0  
3.0  
5.0  
2.0  
3.0  
5.0  
3.0  
5.0  
WDT, BOD, Comparators, VREF  
and T1OSC disabled  
Current (IPD)(4)  
D021E  
0.3  
1.8  
8.4  
58  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
WDT Current  
D022E  
D023E  
BOD Current  
109  
3.3  
6.1  
11.5  
58  
Comparator Current(3)  
D024E  
D025E  
CVREF Current  
T1OSC Current  
A/D Current(3)  
85  
138  
4.0  
4.6  
6.0  
D026E  
0.0012 TBD  
0.0022 TBD  
Legend: TBD = To Be Determined  
Data in ‘Typ’ column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance  
only and are not tested.  
Note 3: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this  
peripheral is enabled. The peripheral current can be determined by subtracting the base IDD or IPD  
current from this limit. Max values should be used when calculating total current consumption.  
4: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is  
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD.  
2004 Microchip Technology Inc.  
Preliminary  
DS41203B-page 141  
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