PIC16F630/676
12.7 DC Characteristics: PIC16F630/676-I (Industrial), PIC16F630/676-E (Extended)
(Cont.)
Standard Operating Conditions (unless otherwise stated)
DC CHARACTERISTICS
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
-40°C ≤ TA ≤ +125°C for extended
Param
Sym
No.
Characteristic
Min
Typ†
Max Units
Conditions
Capacitive Loading Specs
on Output Pins
D100
D101
COSC2 OSC2 pin
—
—
—
—
15*
50*
pF In XT, HS and LP modes when
external clock is used to drive
OSC1
CIO
All I/O pins
pF
Data EEPROM Memory
Byte Endurance
Byte Endurance
D120
D120A
D121
ED
ED
100K
10K
1M
100K
—
—
—
E/W -40°C ≤ TA ≤ +85°C
E/W +85°C ≤ TA ≤ +125°C
VDRW VDD for Read/Write
VMIN
5.5
V
Using EECON to read/write
VMIN = Minimum operating
voltage
D122
D123
TDEW Erase/Write cycle time
TRETD Characteristic Retention
—
5
6
ms
40
—
—
Year Provided no other specifications
are violated
D124
TREF
Number of Total Erase/Write
Cycles before Refresh(1)
1M
10M
—
E/W -40°C ≤ TA ≤ +85°C
Program FLASH Memory
Cell Endurance
D130
D130A
D131
EP
10K
1K
100K
10K
—
—
—
E/W -40°C ≤ TA ≤ +85°C
E/W +85°C ≤ TA ≤ +125°C
ED
Cell Endurance
VPR
VDD for Read
VMIN
5.5
V
VMIN = Minimum operating
voltage
D132
D133
D134
VPEW VDD for Erase/Write
TPEW Erase/Write cycle time
TRETD Characteristic Retention
4.5
—
—
2
5.5
2.5
—
V
ms
40
—
Year Provided no other specifications
are violated
*
These parameters are characterized but not tested.
†
Data in ‘Typ’ column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: See Section 8.5.1 for additional information.
DS40039E-page 92
© 2007 Microchip Technology Inc.
MICROCHIP [ MICROCHIP ]
