PIC16F630/676
12.3 DC Characteristics: PIC16F630/676-I (Industrial)
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C ≤ TA ≤ +85°C for industrial
Conditions
Param
No.
Device Characteristics
Min
Typ† Max Units
VDD
Note
D020
Power-down Base Current
(IPD)
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.99
1.2
2.9
0.3
1.8
8.4
58
700
770
995
1.5
3.5
17
nA
nA
nA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
nA
μA
2.0
3.0
5.0
2.0
3.0
5.0
3.0
5.0
2.0
3.0
5.0
2.0
3.0
5.0
2.0
3.0
5.0
3.0
5.0
WDT, BOD, Comparators, VREF,
and T1OSC disabled
D021
WDT Current(1)
D022
D023
70
BOD Current(1)
109
3.3
6.1
11.5
58
130
6.5
8.5
16
Comparator Current(1)
D024
D025
D026
70
CVREF Current(1)
T1 OSC Current(1)
A/D Current(1)
85
100
160
6.5
7.0
10.5
755
138
4.0
4.6
6.0
1.2
0.0022 1.0
† Data in ‘Typ’ column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral Δ current can be determined by subtracting the base IDD or IPD
current from this limit. Max values should be used when calculating total current consumption.
2: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD.
DS40039E-page 88
© 2007 Microchip Technology Inc.
MICROCHIP [ MICROCHIP ]
