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PIC16F767-I/SP 参数 Datasheet PDF下载

PIC16F767-I/SP图片预览
型号: PIC16F767-I/SP
PDF下载: 下载PDF文件 查看货源
内容描述: 28 /40/ 44引脚, 8位CMOS闪存微控制器与10位A / D和纳瓦技术 [28/40/44-Pin, 8-Bit CMOS Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology]
分类和应用: 闪存微控制器和处理器外围集成电路光电二极管时钟
文件页数/大小: 276 页 / 4898 K
品牌: MICROCHIP [ MICROCHIP TECHNOLOGY ]
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PIC16F7X7
18.1
DC Characteristics: PIC16F737/747/767/777 (Industrial, Extended)
PIC16LF737/747/767/777 (Industrial)
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C
T
A
+85°C for industrial
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C
T
A
+85°C for industrial
-40°C
T
A
+125°C for extended
Characteristic
Supply Voltage
PIC16LF7X7
2.5
2.2
2.0
4.0
V
BOR
*
1.5
V
SS
5.5
5.5
5.5
5.5
5.5
V
V
V
V
V
V
V
See section on Power-on Reset for details
A/D in use, -40°C to +85°C
A/D in use, 0°C to +85°C
A/D not used, -40°C to +85°C
All configurations
BOR enabled
(Note 6)
Min
Typ†
Max
Units
Conditions
PIC16LF737/747/767/777
(Industrial)
PIC16F737/747/767/777
(Industrial, Extended)
Param
No.
D001
Sym
V
DD
D001
D001A
D002*
D003
V
DR
V
POR
RAM Data Retention
Voltage (Note 1)
PIC16F7X7
V
DD
Start Voltage
to
ensure internal Power-on Reset
signal
V
DD
Rise Rate
to ensure
internal Power-on Reset signal
Brown-out Reset Voltage
PIC16LF7X7
BORV1:BORV0 =
11
BORV1:BORV0 =
10
BORV1:BORV0 =
01
BORV1:BORV0 =
00
D004*
SV
DD
V
BOR
0.05
V/ms See section on Power-on Reset for details
D005
1.96
2.64
4.11
4.41
PIC16F7X7 Industrial
N.A.
4.16
4.45
PIC16F7X7 Extended
N.A.
4.07
4.36
2.06
2.78
4.33
4.64
2.16
2.92
4.55
4.87
N.A.
4.5
4.83
N.A.
4.59
4.92
V
V
V
V
V
V
V
V
V
V
85°C
T
25°C
D005
BORV1:BORV0 =
1x
BORV1:BORV0 =
01
BORV1:BORV0 =
00
D005
BORV1:BORV0 =
1x
BORV1:BORV0 =
01
BORV1:BORV0 =
00
Legend:
*
Note 1:
2:
Not in operating voltage range of device
Not in operating voltage range of device
3:
4:
5:
6:
Shading of rows is to assist in readability of of the table.
These parameters are characterized but not tested.
Data in “Typ” column is at 5V, 25°C unless otherwise stated. These parameters are for design guidance only and are not
tested.
This is the limit to which V
DD
can be lowered without losing RAM data.
The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O pin loading and
switching rate, oscillator type, internal code execution pattern and temperature, also have an impact on the current
consumption.
The test conditions for all I
DD
measurements in active operation mode are:
OSC1 = external square wave, from-rail to-rail; all I/O pins tri-stated, pulled to V
DD
MCLR = V
DD
; WDT enabled/disabled as specified.
The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with the
part in Sleep mode, with all I/O pins in high-impedance state and tied to V
DD
and V
SS
.
For RC oscillator configuration, current through R
EXT
is not included. The current through the resistor can be estimated
by the formula Ir = V
DD
/2R
EXT
(mA) with R
EXT
in kΩ.
The
current is the additional current consumed when this peripheral is enabled. This current should be added to the
base I
DD
or I
PD
measurement.
When BOR is enabled, the device will operate correctly until the V
BOR
voltage trip point is reached.
2004 Microchip Technology Inc.
DS30498C-page 209