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PIC16F767-I/SP 参数 Datasheet PDF下载

PIC16F767-I/SP图片预览
型号: PIC16F767-I/SP
PDF下载: 下载PDF文件 查看货源
内容描述: 28 /40/ 44引脚, 8位CMOS闪存微控制器与10位A / D和纳瓦技术 [28/40/44-Pin, 8-Bit CMOS Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology]
分类和应用: 闪存微控制器和处理器外围集成电路光电二极管时钟
文件页数/大小: 276 页 / 4898 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC16F7X7  
18.1 DC Characteristics: PIC16F737/747/767/777 (Industrial, Extended)  
PIC16LF737/747/767/777 (Industrial)  
Standard Operating Conditions (unless otherwise stated)  
Operating temperature -40°C TA +85°C for industrial  
PIC16LF737/747/767/777  
(Industrial)  
Standard Operating Conditions (unless otherwise stated)  
PIC16F737/747/767/777  
(Industrial, Extended)  
Operating temperature  
-40°C TA +85°C for industrial  
-40°C TA +125°C for extended  
Param  
Sym  
No.  
Characteristic  
Supply Voltage  
Min  
Typ† Max Units  
Conditions  
VDD  
D001  
PIC16LF7X7  
2.5  
2.2  
2.0  
5.5  
5.5  
5.5  
V
V
V
A/D in use, -40°C to +85°C  
A/D in use, 0°C to +85°C  
A/D not used, -40°C to +85°C  
D001  
D001A  
PIC16F7X7  
4.0  
VBOR*  
5.5  
5.5  
V
V
All configurations  
BOR enabled (Note 6)  
D002*  
VDR  
RAM Data Retention  
Voltage (Note 1)  
1.5  
V
D003  
VPOR VDD Start Voltage to  
ensure internal Power-on Reset  
signal  
VSS  
V
See section on Power-on Reset for details  
D004*  
D005  
SVDD VDD Rise Rate to ensure  
0.05  
V/ms See section on Power-on Reset for details  
internal Power-on Reset signal  
VBOR Brown-out Reset Voltage  
PIC16LF7X7  
BORV1:BORV0 = 11  
BORV1:BORV0 = 10  
BORV1:BORV0 = 01  
BORV1:BORV0 = 00  
1.96  
2.06 2.16  
2.78 2.92  
4.33 4.55  
4.64 4.87  
V
V
V
V
85°C T 25°C  
2.64  
4.11  
4.41  
D005  
PIC16F7X7 Industrial  
BORV1:BORV0 = 1x  
BORV1:BORV0 = 01  
BORV1:BORV0 = 00  
N.A.  
N.A.  
4.5  
V
V
V
Not in operating voltage range of device  
Not in operating voltage range of device  
4.16  
4.45  
4.83  
D005  
PIC16F7X7 Extended  
BORV1:BORV0 = 1x  
BORV1:BORV0 = 01  
BORV1:BORV0 = 00  
N.A.  
4.07  
4.36  
N.A.  
4.59  
4.92  
V
V
V
Legend:  
Shading of rows is to assist in readability of of the table.  
These parameters are characterized but not tested.  
*
Data in “Typ” column is at 5V, 25°C unless otherwise stated. These parameters are for design guidance only and are not  
tested.  
Note 1: This is the limit to which VDD can be lowered without losing RAM data.  
2: The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O pin loading and  
switching rate, oscillator type, internal code execution pattern and temperature, also have an impact on the current  
consumption.  
The test conditions for all IDD measurements in active operation mode are:  
OSC1 = external square wave, from-rail to-rail; all I/O pins tri-stated, pulled to VDD  
MCLR = VDD; WDT enabled/disabled as specified.  
3: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with the  
part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD and VSS.  
4: For RC oscillator configuration, current through REXT is not included. The current through the resistor can be estimated  
by the formula Ir = VDD/2REXT (mA) with REXT in k.  
5: The current is the additional current consumed when this peripheral is enabled. This current should be added to the  
base IDD or IPD measurement.  
6: When BOR is enabled, the device will operate correctly until the VBOR voltage trip point is reached.  
2004 Microchip Technology Inc.  
DS30498C-page 209  
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