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PIC16F767-I/SP 参数 Datasheet PDF下载

PIC16F767-I/SP图片预览
型号: PIC16F767-I/SP
PDF下载: 下载PDF文件 查看货源
内容描述: 28 /40/ 44引脚, 8位CMOS闪存微控制器与10位A / D和纳瓦技术 [28/40/44-Pin, 8-Bit CMOS Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology]
分类和应用: 闪存微控制器和处理器外围集成电路光电二极管时钟
文件页数/大小: 276 页 / 4898 K
品牌: MICROCHIP [ MICROCHIP TECHNOLOGY ]
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PIC16F7X7
18.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Ambient temperature under bias.............................................................................................................-40°C to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on any pin with respect to V
SS
(except V
DD
, MCLR and RA4) .......................................... -0.3V to (V
DD
+ 0.3V)
Voltage on V
DD
with respect to V
SS
............................................................................................................ -0.3 to +6.5V
Voltage on MCLR with respect to V
SS
(Note 2)
..............................................................................................0 to +13.5V
Voltage on RA4 with respect to V
SS
...................................................................................................................0 to +12V
Total power dissipation
(Note 1)
...............................................................................................................................1.0W
Maximum current out of V
SS
pin ...........................................................................................................................300 mA
Maximum current into V
DD
pin ..............................................................................................................................250 mA
Input clamp current, I
IK
(V
I
< 0 or V
I
> V
DD
)......................................................................................................................
±20
mA
Output clamp current, I
OK
(V
O
< 0 or V
O
> V
DD
)
.............................................................................................................. ±20
mA
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk by PORTA, PORTB and PORTE (combined)
(Note 3)
....................................................200 mA
Maximum current sourced by PORTA, PORTB and PORTE (combined)
(Note 3)...............................................200
mA
Maximum current sunk by PORTC and PORTD (combined)
(Note 3)
.................................................................200 mA
Maximum current sourced by PORTC and PORTD (combined)
(Note 3)
............................................................200 mA
Note 1:
Power dissipation is calculated as follows: Pdis = V
DD
x {I
DD
I
OH
} +
{(V
DD
– V
OH
) x I
OH
} +
∑(V
OL
x I
OL
)
2:
Voltage spikes at the MCLR pin may cause latch-up. A series resistor of greater than 1 kΩ should be used
to pull MCLR to V
DD
, rather than tying the pin directly to V
DD
.
3:
PORTD and PORTE are not implemented on the PIC16F737/767 devices.
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
2004 Microchip Technology Inc.
DS30498C-page 207