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PIC16C558/JW 参数 Datasheet PDF下载

PIC16C558/JW图片预览
型号: PIC16C558/JW
PDF下载: 下载PDF文件 查看货源
内容描述: 集成电路(IC) 8位的CMOS微控制器\n [IC-8-BIT CMOS MCU ]
分类和应用: 微控制器
文件页数/大小: 96 页 / 988 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC16C55X(A)  
10.0 ELECTRICAL SPECIFICATIONS  
Absolute Maximum Ratings †  
Ambient Temperature under bias ............................................................................................................. –40° to +125°C  
Storage Temperature................................................................................................................................ –65° to +150°C  
Voltage on any pin with respect to VSS (except VDD and MCLR)...................................................... –0.6V to VDD +0.6V  
Voltage on VDD with respect to VSS ............................................................................................................... 0 to +7.5V  
Voltage on MCLR with respect to VSS (Note 2)................................................................................................. 0 to +14V  
Total power Dissipation (Note 1) ...............................................................................................................................1.0W  
Maximum Current out of VSS pin...........................................................................................................................300 mA  
Maximum Current into VDD pin..............................................................................................................................250 mA  
Input Clamp Current, IIK (VI<0 or VI> VDD) ...................................................................................................................... ±20 mA  
Output Clamp Current, IOK (V0 <0 or V0>VDD) ............................................................................................................... ±20 mA  
Maximum Output Current sunk by any I/O pin ........................................................................................................25 mA  
Maximum Output Current sourced by any I/O pin...................................................................................................25 mA  
Maximum Current sunk by PORTA and PORTB ...................................................................................................200 mA  
Maximum Current sourced by PORTA and PORTB..............................................................................................200 mA  
Note 1: Power dissipation is calculated as follows: PDIS = VDD x {IDD - IOH} + {(VDD-VOH) x IOH} + (VOl x IOL)  
NOTICE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the  
device. This is a stress rating only and functional operation of the device at those or any other conditions above  
those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions  
for extended periods may affect device reliability.  
1997 Microchip Technology Inc.  
Preliminary  
DS40143B-page 67  
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