PIC16C71X
Applicable Devices 710 71 711 715
11.1
DC Characteristics:
PIC16C710-04 (Commercial, Industrial, Extended)
PIC16C711-04 (Commercial, Industrial, Extended)
PIC16C710-10 (Commercial, Industrial, Extended)
PIC16C711-10 (Commercial, Industrial, Extended)
PIC16C710-20 (Commercial, Industrial, Extended)
PIC16C711-20 (Commercial, Industrial, Extended)
Standard Operating Conditions (unless otherwise stated)
Operating temperature 0˚C
-40˚C
-40˚C
≤ TA ≤ +70˚C (commercial)
≤ TA ≤ +85˚C (industrial)
≤ TA ≤ +125˚C (extended)
DC CHARACTERISTICS
Param.
No.
Characteristic
Sym Min Typ† Max Units
Conditions
D001
D001A
Supply Voltage
VDD
4.0
4.5
-
-
6.0
5.5
V
V
XT, RC and LP osc configuration
HS osc configuration
D002*
D003
RAM Data Retention
Voltage (Note 1)
VDR
-
1.5
-
V
VDD start voltage to
ensure internal Power-
on Reset signal
VPOR
-
VSS
-
V
See section on Power-on Reset for details
D004*
VDD rise rate to ensure
internal Power-on Reset
signal
SVDD 0.05
-
-
V/ms See section on Power-on Reset for details
D005
D010
Brown-out Reset Voltage BVDD 3.7 4.0 4.3
3.7 4.0 4.4
V
V
BODEN configuration bit is enabled
Extended Range Only
Supply Current (Note 2)
IDD
-
2.7
5
mA XT, RC osc configuration
FOSC = 4 MHz, VDD = 5.5V (Note 4)
D013
D015
-
-
13.5 30
mA HS osc configuration
FOSC = 20 MHz, VDD = 5.5V
Brown-out Reset Current ∆IBOR
300* 500 µA BOR enabled VDD = 5.0V
(Note 5)
D020
D021
D021A
D021B
Power-down Current
(Note 3)
IPD
-
-
-
-
10.5 42 µA VDD = 4.0V, WDT enabled, -40°C to +85°C
1.5
1.5
1.5
21
24
30
µA VDD = 4.0V, WDT disabled, -0°C to +70°C
µA VDD = 4.0V, WDT disabled, -40°C to +85°C
µA VDD = 4.0V, WDT disabled, -40°C to +125°C
D023
Brown-out Reset Current ∆IBOR
-
300* 500 µA BOR enabled VDD = 5.0V
(Note 5)
*
These parameters are characterized but not tested.
†
Data in "Typ" column is at 5V, 25˚C unless otherwise stated.These parameters are for design guidance only
and are not tested.
Note 1: This is the limit to which VDD can be lowered without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin
loading and switching rate, oscillator type, internal code execution pattern, and temperature also have an
impact on the current consumption.
The test conditions for all IDD measurements in active operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tristated, pulled to VDD
MCLR = VDD; WDT enabled/disabled as specified.
3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD and VSS.
4: For RC osc configuration, current through Rext is not included. The current through the resistor can be esti-
mated by the formula Ir = VDD/2Rext (mA) with Rext in kOhm.
5: The ∆ current is the additional current consumed when this peripheral is enabled. This current should be
added to the base IDD or IPD measurement.
DS30272A-page 90
1997 Microchip Technology Inc.
MICROCHIP [ MICROCHIP ]
