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PIC10F200-I/P 参数 Datasheet PDF下载

PIC10F200-I/P图片预览
型号: PIC10F200-I/P
PDF下载: 下载PDF文件 查看货源
内容描述: 6引脚8位闪存微控制器 [6-Pin, 8-Bit Flash Microcontrollers]
分类和应用: 闪存微控制器和处理器外围集成电路光电二极管PC时钟
文件页数/大小: 96 页 / 1447 K
品牌: MICROCHIP [ MICROCHIP ]
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PIC10F200/202/204/206  
12.1 DC Characteristics: PIC10F200/202/204/206 (Industrial)  
Standard Operating Conditions (unless otherwise specified)  
Operating Temperature -40×C TA +85°C (industrial)  
DC CHARACTERISTICS  
Param  
Sym  
No.  
(1)  
Characteristic  
Min Typ  
Max Units  
Conditions  
D001  
D002  
D003  
VDD Supply Voltage  
2.0  
5.5  
V
V
V
See Figure 12-1  
Device in Sleep mode  
(2)  
VDR RAM Data Retention Voltage  
1.5*  
VPOR VDD Start Voltage  
Vss  
to ensure Power-on Reset  
D004  
D010  
D020  
D022  
D023  
D024  
SVDD VDD Rise Rate  
to ensure Power-on Reset)  
(3)  
0.05*  
V/ms  
IDD  
Supply Current  
175  
0.63  
275  
1.1  
μA  
VDD = 2.0V  
mA VDD = 5.0V  
(4)  
IPD  
Power-down Current  
0.1  
0.35  
1.2  
2.4  
μA  
μA  
VDD = 2.0V  
VDD = 5.0V  
(5)  
IWDT WDT Current  
1.0  
7
3
16  
μA  
μA  
VDD = 2.0V  
VDD = 5.0V  
(5)  
ICMP Comparator Current  
12  
44  
23  
80  
μA  
μA  
VDD = 2.0V  
VDD = 5.0V  
(5), (6)  
IVREF Internal Reference Current  
85  
175  
115  
195  
μA  
μA  
VDD = 2.0V.  
VDD = 5.0V  
*
These parameters are characterized but not tested.  
Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25°C. This data is for design guidance only  
and is not tested.  
2: This is the limit to which VDD can be lowered in Sleep mode without losing RAM data.  
3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus loading, bus  
rate, internal code execution pattern and temperature also have an impact on the current consumption.  
a) The test conditions for all IDD measurements in active operation mode are:  
All I/O pins tri-stated, pulled to VSS, T0CKI = VDD, MCLR = VDD; WDT enabled/disabled as specified.  
b) For standby current measurements, the conditions are the same, except that the device is in Sleep mode.  
4: Power-down current is measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD  
or VSS.  
5: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this peripheral is  
enabled.  
6: Measured with the comparator enabled.  
© 2007 Microchip Technology Inc.  
DS41239D-page 65  
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