MCP73831/2
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, all limits apply for V = [V
(typ.) + 0.3V] to 6V, T = -40°C to +85°C.
A
DD
REG
Typical values are at +25°C, V = [V
(typ.) + 1.0V]
DD
REG
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Preconditioning Current Regulation (Trickle Charge Constant-Current Mode)
Precondition Current
Ratio
I
/ I
7.5
15
30
—
10
20
12.5
25
%
%
%
%
PROG = 2.0 kΩ to 10 kΩ
PROG = 2.0 kΩ to 10 kΩ
PROG = 2.0 kΩ to 10 kΩ
No Preconditioning
PREG REG
40
50
100
—
T
= -5°C to +55°C
A
Precondition Voltage
Threshold Ratio
V
I
/ V
64
69
—
66.5
71.5
110
69
74
—
%
%
V
V
V
Low-to-High
Low-to-High
High-to-Low
PTH
REG
BAT
BAT
BAT
Precondition Hysteresis
V
mV
PHYS
Charge Termination
Charge Termination
Current Ratio
/ I
3.75
5.6
7.5
15
5
6.25
9.4
%
%
%
%
PROG = 2.0 kΩ to 10 kΩ
PROG = 2.0 kΩ to 10 kΩ
PROG = 2.0 kΩ to 10 kΩ
PROG = 2.0 kΩ to 10 kΩ
TERM REG
7.5
10
20
12.5
25
T
= -5°C to +55°C
A
Automatic Recharge
Recharge Voltage
Threshold Ratio
V
/ V
91.5
94
94.0
96.5
96.5
99
%
%
V
V
High-to-Low
High-to-Low
RTH
REG
BAT
BAT
Pass Transistor ON-Resistance
ON-Resistance
R
—
350
—
mΩ
V
= 3.75V, T = 105°C
DSON
DD
J
Battery Discharge Current
Output Reverse Leakage
Current
I
—
—
—
—
0.15
0.25
0.15
-5.5
2
2
μA
μA
μA
μA
PROG Floating
DISCHARGE
V
V
Floating
DD
DD
2
< V
STOP
-15
Charge Complete
Status Indicator – STAT
Sink Current
I
—
—
—
—
—
—
0.4
—
25
1
mA
V
SINK
Low Output Voltage
Source Current
V
I
I
= 4 mA
SINK
OL
SOURCE
I
35
mA
V
High Output Voltage
Input Leakage Current
PROG Input
V
I
V
-0.4
V
- 1
= 4 mA (MCP73831)
SOURCE
OH
DD
DD
0.03
1
μA
High-Impedance
LK
Charge Impedance
Range
R
R
2
—
—
20
kΩ
kΩ
PROG
PROG
Minimum Shutdown
Impedance
70
200
Automatic Power Down
Automatic Power Down
Entry Threshold
V
V
<(V
+20mV)
V
V
<(V
+50mV)
—
3.5V ≤ V
≤ V
≤ V
PDENTER
DD
BAT
DD
BAT
BAT
REG
V
Falling
DD
Automatic Power Down
Exit Threshold
V
—
<(V
V
<(V
+200mV)
3.5V ≤ V
BAT
PDEXIT
DD
BAT
DD
BAT
REG
+150mV)
V
Rising
DD
Thermal Shutdown
Die Temperature
T
—
—
150
10
—
—
°C
°C
SD
Die Temperature
Hysteresis
T
SDHYS
Note 1: Not production tested. Ensured by design.
DS21984B-page 4
© 2006 Microchip Technology Inc.
MICROCHIP [ MICROCHIP ]
