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MCP1727-1202E/SN 参数 Datasheet PDF下载

MCP1727-1202E/SN图片预览
型号: MCP1727-1202E/SN
PDF下载: 下载PDF文件 查看货源
内容描述: 1.5A ,低电压,低静态电流LDO稳压器 [1.5A, Low Voltage, Low Quiescent Current LDO Regulator]
分类和应用: 线性稳压器IC调节器电源电路光电二极管输出元件
文件页数/大小: 32 页 / 787 K
品牌: MICROCHIP [ MICROCHIP ]
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MCP1727  
AC/DC CHARACTERISTICS (CONTINUED)  
Electrical Specifications: Unless otherwise noted, VIN = VOUT(MAX) + VDROPOUT(MAX) (Note 1), VR=1.8V for Adjustable Output,  
OUT = 1 mA, CIN = COUT = 4.7 µF (X7R Ceramic), TA = +25°C.  
Boldface type applies for junction temperatures, TJ (Note 7) of -40°C to +125°C  
I
Parameters  
Output Noise  
Sym  
Min  
Typ  
Max  
Units  
Conditions  
eN  
2.0  
µV/Hz IOUT = 200 mA, f = 1 kHz, COUT  
= 10 µF (X7R Ceramic), VOUT  
2.5V  
=
Power Supply Ripple Rejection  
Ratio  
PSRR  
60  
dB  
f = 100 Hz, COUT = 10 µF,  
I
OUT = 10 mA,  
INAC = 30 mV pk-pk,  
IN = 0 µF  
V
C
Thermal Shutdown Temperature  
Thermal Shutdown Hysteresis  
TSD  
150  
10  
°C  
°C  
IOUT = 100 µA, VOUT = 1.8V,  
IN = 2.8V  
V
ΔTSD  
IOUT = 100 µA, VOUT = 1.8V,  
IN = 2.8V  
V
Note 1: The minimum VIN must meet two conditions: VIN 2.3V and VIN VOUT(MAX) + VDROPOUT(MAX).  
2: VR is the nominal regulator output voltage for the fixed cases. VR = 1.2V, 1.8V, etc. VR is the desired set point output  
voltage for the adjustable cases. VR = VADJ * ((R1/R2)+1). Figure 4-1.  
3: TCVOUT = (VOUT-HIGH – VOUT-LOW) *106 / (VR * ΔTemperature). VOUT-HIGH is the highest voltage measured over the  
temperature range. VOUT-LOW is the lowest voltage measured over the temperature range.  
4: Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is  
tested over a load range from 1 mA to the maximum specified output current.  
5: Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its  
nominal value that was measured with an input voltage of VOUT = VR + VDROPOUT(MAX)  
.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction  
temperature and the thermal resistance from junction to air. (i.e., TA, TJ, θJA). Exceeding the maximum allowable power  
dissipation will cause the device operating junction temperature to exceed the maximum +150°C rating. Sustained  
junction temperatures above 150°C can impact device reliability.  
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the  
desired junction temperature. The test time is small enough such that the rise in the junction temperature over the  
ambient temperature is not significant.  
TEMPERATURE SPECIFICATIONS  
Electrical Specifications: Unless otherwise indicated, all limits apply for VIN = 2.3V to 6.0V.  
Parameters  
Temperature Ranges  
Sym  
Min  
Typ  
Max  
Units  
Conditions  
Operating Junction Temperature Range  
Maximum Junction Temperature  
Storage Temperature Range  
TJ  
TJ  
TA  
-40  
+125  
+150  
+150  
°C  
°C  
°C  
Steady State  
Transient  
-65  
Thermal Package Resistances  
Thermal Resistance, 8LD 3x3 DFN  
θJA  
41  
°C/W 4-Layer JC51-7  
Standard Board with  
vias  
Thermal Resistance, 8LD SOIC  
θJA  
150  
°C/W 4-Layer JC51-7  
Standard Board  
© 2007 Microchip Technology Inc.  
DS21999B-page 7