MCP1702
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise specified, all limits are established for V
IN
= V
OUT(MAX)
+ V
DROPOUT(MAX)
,
Note 1,
I
LOAD
= 100 µA, C
OUT
= 1 µF (X7R), C
IN
= 1 µF (X7R), T
A
= +25°C.
Boldface
type applies for junction temperatures, T
J
of -40°C to +125°C.
(Note 7)
Parameters
Dropout Voltage
Sym
V
DROPOUT
Min
—
—
—
—
—
Output Delay Time
Output Noise
Power Supply Ripple
Rejection Ratio
Thermal Shutdown Protection
Note 1:
2:
3:
4:
5:
6:
T
DELAY
e
N
PSRR
—
—
—
Typ
330
525
625
750
—
1000
8
44
—
Max
650
725
975
1100
—
—
Units
mV
mV
mV
mV
mV
µs
Conditions
I
L
= 250 mA, V
R
= 5.0V
I
L
= 250 mA, 3.3V
≤
V
R
< 5.0V
I
L
= 250 mA, 2.8V
≤
V
R
< 3.3V
I
L
= 250 mA, 2.5V
≤
V
R
< 2.8V
V
R
< 2.5V, See Maximum Output
Current Parameter
V
IN
= 0V to 6V, V
OUT
= 90% V
R
R
L
= 50Ω resistive
f = 100 Hz, C
OUT
= 1 µF, I
L
= 50 mA,
V
INAC
= 100 mV pk-pk, C
IN
= 0 µF,
V
R
= 1.2V
µV/(Hz)
1/2
I
L
= 50 mA, f = 1 kHz, C
OUT
= 1 µF
dB
T
SD
—
150
—
°C
7:
The minimum V
IN
must meet two conditions: V
IN
≥
2.7V and V
IN
≥
V
OUT(MAX)
+ V
DROPOUT(MAX)
.
V
R
is the nominal regulator output voltage. For example: V
R
= 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V.
The input voltage V
IN
= V
OUT(MAX)
+ V
DROPOUT(MAX)
or V
IN
= 2.7V (whichever is greater); I
OUT
= 100 µA.
TCV
OUT
= (V
OUT-HIGH
- V
OUT-LOW
) *10
6
/ (V
R
*
ΔTemperature),
V
OUT-HIGH
= highest voltage measured over the
temperature range. V
OUT-LOW
= lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
OUT
.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of V
OUT(MAX)
+ V
DROPOUT(MAX)
or 2.7V, whichever is greater.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
TEMPERATURE SPECIFICATIONS (NOTE 1)
Parameters
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistance
Thermal Resistance, 3L-SOT-23A
θ
JA
θ
JC
Thermal Resistance, 3L-SOT-89
θ
JA
θ
JC
Thermal Resistance, 3L-TO-92
Note 1:
θ
JA
θ
JC
—
—
—
—
—
—
336
110
52
10
131.9
66.3
—
—
—
—
—
—
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
T
J
T
J
T
A
-40
-40
-65
+125
+125
+150
°C
°C
°C
Sym
Min
Typ
Max
Units
Conditions
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
DS22008B-page 4
©
2007 Microchip Technology Inc.
MICROCHIP [ MICROCHIP TECHNOLOGY ]
