MCP1640/B/C/D
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, V = 1.2V, C
= C = 10 µF, L = 4.7 µH, V
= 3.3V, I
= 15 mA,
IN
OUT
IN
OUT
OUT
T = +25°C.
A
o
o
Boldface specifications apply over the T range of -40 C to +85 C.
A
Parameters
Sym
Min
Typ
Max
Units
Conditions
NMOS Peak Switch Current
Limit
IN(MAX)
600
850
—
mA
Note 5
V
OUT Accuracy
VOUT
%
-3
-1
—
+3
1
%
Includes Line and Load
Regulation; VIN = 1.5V
Line Regulation
Load Regulation
VOUT
VOUT) /
VIN|
/
0.01
%/V
VIN = 1.5V to 3V
IOUT = 25 mA
VOUT
VOUT
/
-1
0.01
1
%
IOUT = 25 mA to 100 mA;
VIN = 1.5V
|
Maximum Duty Cycle
Switching Frequency
EN Input Logic High
EN Input Logic Low
EN Input Leakage Current
Soft-start Time
DCMAX
fSW
88
425
90
—
90
500
—
—
575
—
%
kHz
IOUT = 1 mA
IOUT = 1 mA
VEN = 5V
VIH
%of VIN
%of VIN
µA
—
VIL
20
—
—
—
IENLK
tSS
0.005
750
—
µS
EN Low to High, 90% of
VOUT; Note 4
—
—
—
—
Thermal Shutdown Die
Temperature
TSD
150
C
C
Die Temperature Hysteresis
TSDHYS
10
Note 1: 3.3 K resistive load, 3.3VOUT (1 mA).
2: For VIN > VOUT, VOUT will not remain in regulation.
3: IQ is measured from VOUT; VIN quiescent current will vary with boost ratio. VIN quiescent current can be
estimated by: (IQPFM * (VOUT/VIN)), (IQPWM * (VOUT/VIN)).
4: 220 resistive load, 3.3VOUT (15 mA).
5: Peak current limit determined by characterization, not production tested.
TEMPERATURE SPECIFICATIONS
Electrical Specifications:
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Operating Junction Temperature
Range
TJ
-40
—
+125
°C
Steady State
Storage Temperature Range
TA
TJ
-65
—
—
—
+150
+150
°C
°C
Maximum Junction Temperature
Package Thermal Resistances
Thermal Resistance, 5L-TSOT23
Thermal Resistance, 8L-2x3 DFN
Transient
JA
JA
—
—
192
93
—
—
°C/W EIA/JESD51-3 Standard
°C/W
DS22234A-page 4
2010 Microchip Technology Inc.
MICROCHIP [ MICROCHIP ]
