MCP1640/B/C/D
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
EN, FB, VIN, VSW, VOUT - GND...........................+6.5V
EN, FB ...........<greater of VOUT or VIN > (GND - 0.3V)
Output Short Circuit Current....................... Continuous
Output Current Bypass Mode...........................400 mA
Power Dissipation ............................ Internally Limited
Storage Temperature .........................-65oC to +150oC
Ambient Temp. with Power Applied......-40oC to +85oC
Operating Junction Temperature........-40oC to +125oC
ESD Protection On All Pins:
HBM........................................................ 3 kV
MM........................................................300 V
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, V = 1.2V, C
= C = 10 µF, L = 4.7 µH, V
= 3.3V, I
= 15 mA,
IN
OUT
IN
OUT
OUT
T = +25°C.
A
o
o
Boldface specifications apply over the T range of -40 C to +85 C.
A
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Characteristics
Minimum Start-Up Voltage
VIN
VIN
—
—
0.65
0.35
0.8
V
V
Note 1
Note 1
Minimum Input Voltage After
Start-Up
—
Output Voltage Adjust Range
Maximum Output Current
VOUT
IOUT
2.0
5.5
—
V
VOUT VIN; Note 2
1.2V VIN, 2.0V VOUT
1.5V VIN, 3.3V VOUT
3.3V VIN, 5.0V VOUT
—
150
150
350
1.21
10
mA
mA
mA
V
100
—
—
Feedback Voltage
VFB
IVFB
1.175
—
1.245
—
Feedback Input Bias Current
pA
µA
—
Quiescent Current – PFM
Mode
IQPFM
—
19
30
Measured at VOUT = 4.0V;
EN = VIN, IOUT = 0 mA;
Note 3
Quiescent Current – PWM
Mode
IQPWM
—
—
220
0.7
—
µA
µA
Measured at VOUT; EN = VIN
IOUT = 0 mA; Note 3
Quiescent Current – Shutdown
IQSHDN
2.3
VOUT = EN = GND;
Includes N-Channel and
P-Channel Switch Leakage
NMOS Switch Leakage
PMOS Switch Leakage
INLK
IPLK
—
—
0.3
1
µA
µA
VIN = VSW = 5V; VOUT =
5.5V VEN = VFB = GND
0.05
0.2
VIN = VSW = GND;
VOUT = 5.5V
NMOS Switch ON Resistance
PMOS Switch ON Resistance
RDS(ON)N
RDS(ON)P
—
—
0.6
0.9
—
—
VIN = 3.3V, ISW = 100 mA
VIN = 3.3V, ISW = 100 mA
Note 1: 3.3 K resistive load, 3.3VOUT (1 mA).
2: For VIN > VOUT, VOUT will not remain in regulation.
3: Q is measured from VOUT; VIN quiescent current will vary with boost ratio. VIN quiescent current can be
estimated by: (IQPFM * (VOUT/VIN)), (IQPWM * (VOUT/VIN)).
I
4: 220 resistive load, 3.3VOUT (15 mA).
5: Peak current limit determined by characterization, not production tested.
2010 Microchip Technology Inc.
DS22234A-page 3
MICROCHIP [ MICROCHIP ]
