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DSPIC33FJ128GP306 参数 Datasheet PDF下载

DSPIC33FJ128GP306图片预览
型号: DSPIC33FJ128GP306
PDF下载: 下载PDF文件 查看货源
内容描述: 闪存编程规范 [Flash Programming Specification]
分类和应用: 闪存
文件页数/大小: 80 页 / 943 K
品牌: MICROCHIP [ MICROCHIP ]
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dsPIC33F/PIC24H PROGRAMMING SPECIFICATION  
The key sequence is a specific 32-bit pattern,  
0100 1101 0100 0011 0100 1000 0101 0001’  
(more easily remembered as 0x4D434851 in hexa-  
decimal). The device will enter Program/Verify mode only  
if the sequence is valid. The Most Significant bit (MSb) of  
the most significant nibble must be shifted in first.  
5.3  
Entering ICSP Mode  
As shown in Figure 5-4, entering ICSP Program/Verify  
mode requires three steps:  
1. MCLR is briefly driven high then low.  
2. A 32-bit key sequence is clocked into PGD.  
Once the key sequence is complete, VIH must be  
applied to MCLR and held at that level for as long as  
Program/Verify mode is to be maintained. An interval of  
at least time P19 and P7 must elapse before presenting  
data on PGD. Signals appearing on PGD before P7  
has elapsed will not be interpreted as valid.  
3. MCLR is then driven high within a specified  
period of time and held.  
The programming voltage applied to MCLR is VIH,  
which is essentially VDD in the case of dsPIC33F/  
PIC24H devices. There is no minimum time require-  
ment for holding at VIH. After VIH is removed, an inter-  
val of at least P18 must elapse before presenting the  
key sequence on PGD.  
On successful entry, the program memory can be  
accessed and programmed in serial fashion. While  
in ICSP mode, all unused I/Os are placed in the  
high-impedance state.  
FIGURE 5-4:  
ENTERING ICSP™ MODE  
P6  
P19  
P7  
P14  
VIH  
VIH  
MCLR  
VDD  
Program/Verify Entry Code = 0x4D434851  
0
1
0
0
1
0
0
0
1
...  
PGD  
b31 b30 b29 b28 b27  
b3  
b2  
b1  
b0  
PGC  
P1A  
P1B  
P18  
TABLE 5-2:  
NVMCON ERASE  
OPERATIONS  
5.4  
Flash Memory Programming in  
ICSP Mode  
NVMCON  
Value  
Erase Operation  
5.4.1  
PROGRAMMING OPERATIONS  
Flash memory write and erase operations are controlled  
by the NVMCON register. Programming is performed by  
setting NVMCON to select the type of erase operation  
(Table 5-2) or write operation (Table 5-3) and initiating  
the programming by setting the WR control bit  
(NVMCON<15>).  
0x404F  
Erase all code memory, executive memory  
and Configuration registers (does not  
erase Unit ID or Device ID registers).  
0x404D  
0x404C  
Erase General Segment and FGS  
Configuration register.  
Erase Secure Segment and FSS  
Configuration register. This operation will  
also erase the General Segment and FGS  
Configuration register.  
In ICSP mode, all programming operations are self-  
timed. There is an internal delay between the user set-  
ting the WR control bit and the automatic clearing of the  
WR control bit when the programming operation is  
complete. Please refer to Section TABLE 8-1: “AC/  
DC Characteristics and Timing Requirements” for  
information about the delays associated with various  
programming operations.  
0x4042  
0x4040  
Erase a page of code memory or  
executive memory.  
Erase a Configuration register byte.  
© 2007 Microchip Technology Inc.  
Preliminary  
DS70152D-page 57  
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