93LC76/86
8K/16K 2.5V Microwire Serial EEPROM
PACKAGE TYPES
DIP Package
FEATURES
• Single supply with programming operation down
to 2.5V
• Low power CMOS technology
- 1 mA active current typical
8
1
V
CC
CS
- 5 µA standby current (typical) at 3.0V
7
6
5
2
3
4
PE
CLK
DI
• ORG pin selectable memory configuration
1024 x 8 or 512 x 16 bit organization (93LC76)
2048 x 8 or 1024 x 16 bit organization (93LC86)
ORG
DO
V
SS
• Self-timed ERASE and WRITE cycles
(including auto-erase)
SOIC Package
• Automatic ERAL before WRAL
• Power on/off data protection circuitry
• Industry standard 3-wire serial I/O
• Device status signal during ERASE/WRITE cycles
• Sequential READ function
8
1
CS
CLK
DI
V
CC
PE
ORG
7
6
5
2
3
4
V
DO
SS
• 10,000,000 ERASE/WRITE cycles guaranteed
• Data retention > 200 years
• 8-pin PDIP/SOIC package
BLOCK DIAGRAM
• Temperature ranges available
- Commercial (C)
- Industrial (I)
0°C to +70°C
-40°C to +85°C
VCC VSS
DESCRIPTION
Address
Decoder
Memory
Array
The Microchip Technology Inc. 93LC76/86 are 8K and
16K low voltage serial Electrically Erasable PROMs.
The device memory is configured as x8 or x16 bits
depending on the ORG pin setup. Advanced CMOS
technology makes these devices ideal for low power
non-volatile memory applications. These devices also
have a Program Enable (PE) pin to allow the user to
write protect the entire contents of the memory array.
The 93LC76/86 is available in standard 8-pin DIP and
8-pin surface mount SOIC packages.
Address
Counter
Data
Register
Output
Buffer
DO
DI
Mode
Decode
PE
Logic
CS
Clock
CLK
Generator
Microwire is a registered trademark of National Semiconductor Incorporated.
1996 Microchip Technology Inc.
Preliminary
DS21131C-page 1
This document was created with FrameMaker 4 0 4
MICROCHIP [ MICROCHIP ]
