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93LC66B-I/SN 参数 Datasheet PDF下载

93LC66B-I/SN图片预览
型号: 93LC66B-I/SN
PDF下载: 下载PDF文件 查看货源
内容描述: 4K的Microwire兼容串行EEPROM [4K Microwire Compatible Serial EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 28 页 / 424 K
品牌: MICROCHIP [ MICROCHIP TECHNOLOGY ]
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93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
2.5
Erase All (ERAL)
The Erase All (ERAL) instruction will erase the entire
memory array to the logical ‘1’ state. The ERAL cycle
is identical to the erase cycle, except for the different
opcode. The ERAL cycle is completely self-timed and
commences at the falling edge of the CS, except on
‘93C’ devices where the rising edge of CLK before the
last data bit initiates the write cycle. Clocking of the
CLK pin is not necessary after the device has entered
the ERAL cycle.
The DO pin indicates the Ready/Busy status of the
device, if CS is brought high after a minimum of 250 ns
low (T
CSL
).
Note:
Issuing a Start bit and then taking CS low
will clear the Ready/Busy status from DO.
V
CC
must be
4.5V for proper operation of ERAL.
FIGURE 2-3:
CS
ERAL TIMING FOR 93AA AND 93LC DEVICES
T
CSL
Check Status
CLK
DI
1
0
0
1
0
x
•••
x
T
SV
T
CZ
Ready
High-Z
T
EC
DO
High-Z
Busy
V
CC
must be
4.5V for proper operation of ERAL.
FIGURE 2-4:
CS
ERAL TIMING FOR 93C DEVICES
T
CSL
Check Status
CLK
DI
1
0
0
1
0
x
•••
x
T
SV
T
CZ
Ready
High-Z
T
EC
DO
High-Z
Busy
DS21795C-page 8
©
2005 Microchip Technology Inc.