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93LC46B-I/SN 参数 Datasheet PDF下载

93LC46B-I/SN图片预览
型号: 93LC46B-I/SN
PDF下载: 下载PDF文件 查看货源
内容描述: 1K的Microwire兼容串行EEPROM [1K Microwire Compatible Serial EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 24 页 / 388 K
品牌: MICROCHIP [ MICROCHIP TECHNOLOGY ]
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93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C
2.8
WRITE
The
WRITE
instruction is followed by 8 bits (If ORG is
low or A-version devices) or 16 bits (If ORG pin is high
or B-version devices) of data which are written into the
specified address. For 93AA46A/B/C and 93LC46A/B/
C devices, after the last data bit is clocked into DI, the
falling edge of CS initiates the self-timed auto-erase
and programming cycle. For 93C46A/B/C devices, the
self-timed auto-erase and programming cycle is
initiated by the rising edge of CLK on the last data bit.
The DO pin indicates the READY/BUSY status of the
device, if CS is brought high after a minimum of 250 ns
low (T
CSL
). DO at logical ‘0’ indicates that programming
is still in progress. DO at logical ‘1’ indicates that the
register at the specified address has been written with
the data specified and the device is ready for another
instruction.
Note:
Issuing a Start bit and then taking CS low
will clear the READY/BUSY status from
DO.
FIGURE 2-8:
CS
WRITE TIMING FOR 93AA AND 93LC DEVICES
T
CSL
CLK
DI
1
0
1
An
•••
A0
Dx
•••
D0
T
SV
T
CZ
READY
DO
HIGH-Z
BUSY
HIGH-Z
Twc
FIGURE 2-9:
CS
WRITE TIMING FOR 93C DEVICES
T
CSL
CLK
DI
1
0
1
An
•••
A0
Dx
•••
D0
T
SV
T
CZ
READY
DO
HIGH-Z
BUSY
HIGH-Z
Twc
2003 Microchip Technology Inc.
DS21749D-page 9