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25AA512-I/SN 参数 Datasheet PDF下载

25AA512-I/SN图片预览
型号: 25AA512-I/SN
PDF下载: 下载PDF文件 查看货源
内容描述: 512 Kbit的SPI总线串行EEPROM [512 Kbit SPI Bus Serial EEPROM]
分类和应用: 存储内存集成电路光电二极管PC可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
文件页数/大小: 36 页 / 646 K
品牌: MICROCHIP [ MICROCHIP ]
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25AA512  
2.10 CHIP ERASE  
The CHIP ERASEinstruction will erase all bits (FFh) in  
the array. A Write Enable (WREN) instruction must be  
given prior to executing a CHIP ERASE. This is done  
by setting CS low and then clocking out the proper  
instruction into the 25AA512. After all eight bits of the  
instruction are transmitted, the CS must be brought  
high to set the write enable latch.  
The CS pin must be driven high after the eighth bit of  
the instruction code has been given or the CHIP  
ERASE instruction will not be executed. Once the CS  
pin is driven high the self-timed CHIP ERASEinstruc-  
tion begins. While the device is executing the CHIP  
ERASEinstruction the WIP bit in the STATUS register  
can be read to determine when the CHIP ERASE  
instruction is complete.  
The CHIP ERASEinstruction is entered by driving the  
CS low, followed by the instruction code (Figure 2-10)  
onto the SI line.  
The CHIP ERASEinstruction is ignored if either of the  
Block Protect bits (BP0, BP1) are not 0, meaning ¼,  
½, or all of the array is protected.  
FIGURE 2-10:  
CHIP ERASE SEQUENCE  
CS  
0
1
2
3
4
5
6
7
SCK  
1
1
0
0
0
1
1
1
SI  
High-Impedance  
SO  
2010 Microchip Technology Inc.  
DS22021F-page 17  
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