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11AA02E64T-I/TT 参数 Datasheet PDF下载

11AA02E64T-I/TT图片预览
型号: 11AA02E64T-I/TT
PDF下载: 下载PDF文件 查看货源
内容描述: [SPI BUS SERIAL EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
文件页数/大小: 32 页 / 482 K
品牌: MICROCHIP [ MICROCHIP ]
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11AA02E48/11AA02E64  
TABLE 4-2:  
INTERNAL ADDRESS  
COUNTER  
4.2  
Current Address Read (CRRD)  
Instruction  
Command  
Event  
Action  
The internal address counter featured on the  
11AA02EXX maintains the address of the last memory  
array location accessed. The CRRD instruction allows  
the master to read data back beginning from this  
current location. Consequently, no word address is  
provided upon issuing this command.  
Power-on Reset Counter is undefined  
READor  
WRITE  
MAK edge  
following each with newly received  
Address byte value  
Counter is updated  
READ,  
WRITE, or  
CRRD  
MAK/NoMAK Counter is  
edge following incremented by 1  
each data byte  
Note that, except for the initial word address, the READ  
and CRRD instructions are identical, including the  
ability to continue requesting data through the use of  
MAKs in order to sequentially read from the array.  
Note:  
Note:  
If, following each data byte in a READ,  
WRITE, or CRRD instruction, neither a  
MAK nor a NoMAK edge is received  
(i.e., if a standby pulse occurs instead),  
the internal address counter will not be  
incremented.  
As with the READ instruction, the CRRD instruction is  
terminated by transmitting a NoMAK.  
Table 4-2 lists the events upon which the internal  
address counter is modified.  
During a Write command, once the last  
data byte for a page has been loaded, the  
internal Address Pointer will rollover to the  
beginning of the selected page.  
FIGURE 4-2:  
CRRD COMMAND SEQUENCE  
Device Address  
Standby Pulse  
Start Header  
SCIO  
0 1 0 1 0 1 0 1  
1 0 1 0 0 0 0 0  
Command  
Data Byte 1  
Data Byte 2  
7 6 5 4 3 2 1 0  
7 6 5 4 3 2 1 0  
SCIO  
SCIO  
0 0 0 0 0 1 1 0  
Data Byte n  
7 6 5 4 3 2 1 0  
DS20002122D-page 10  
2008-2016 Microchip Technology Inc.