11AA02E48
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
V
CC
.............................................................................................................................................................................6.5V
SCIO w.r.t. V
SS
.................................................................................................................................... -0.6V to V
CC
+1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias .................................................................................................................-40°C to 85°C
ESD protection on all pins ..........................................................................................................................................4 kV
†
NOTICE: Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
Electrical Characteristics:
Industrial (I):
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 2.5V
Min.
0.7*V
CC
-0.3
-0.3
0.05*Vcc
V
CC
-0.5
V
CC
-0.5
—
—
—
—
—
—
Max.
V
CC
+1
0.3*V
CC
0.2*V
CC
—
—
—
0.4
0.4
±4
±3
±1
7
Units
V
V
V
V
V
V
V
V
mA
mA
μA
pF
V
CC
≥
2.5V
V
CC
< 2.5V
V
CC
≥
2.5V
I
OH
= -300
μA,
V
CC
= 5.5V
I
OH
= -200
μA,
Vcc = 2.5V
I
O
I = 300
μA,
V
CC
= 5.5V
I
O
I = 200
μA,
Vcc = 2.5V
V
CC
= 5.5V
(Note 1)
Vcc = 2.5V
(Note 1)
V
IN
= V
SS
or V
CC
T
A
= 25°C, F
CLK
= 1 MHz,
V
CC
= 5.0V
V
CC
=5.5V, F
BUS
=100 kHz, C
B
=100 pF
V
CC
=2.5V, F
BUS
=100 kHz, C
B
=100 pF
V
CC
= 5.5V
V
CC
= 2.5V
V
CC
= 5.5V, T
A
= 85°C
V
CC
= 5.5V
T
A
= -40°C to +85°C
T
A
= -20°C to +85°C
Test Conditions
DC CHARACTERISTICS
Param.
No.
D1
D2
D3
D4
D5
D6
D7
D8
Sym.
V
IH
V
IL
V
HYS
V
OH
V
OL
I
O
I
LI
C
INT
Characteristic
High-level Input
Voltage
Low-level Input
Voltage
Hysteresis of Schmitt
Trigger inputs (SCIO)
High-level Output
Voltage
Low-level Output
Voltage
Output Current Limit
(Note 2)
Input Leakage
Current (SCIO)
Internal Capacitance
(all inputs and
outputs)
D9
D10
D11
D12
Note 1:
2:
I
CC
Read Read Operating
Current
I
CC
Write Write Operating
Current
Iccs
I
CCI
Standby Current
Idle Mode Current
—
—
—
—
—
—
3
1
5
3
1
50
mA
mA
mA
mA
μA
μA
This parameter is periodically sampled and not 100% tested.
The SCIO output driver impedance will vary to ensure I
O
is not exceeded.
DS22122A-page 2
Preliminary
©
2008 Microchip Technology Inc.
MICROCHIP [ MICROCHIP TECHNOLOGY ]
