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ML2008CP 参数 Datasheet PDF下载

ML2008CP图片预览
型号: ML2008CP
PDF下载: 下载PDF文件 查看货源
内容描述: レP兼容的对数增益/衰减器 [レP Compatible Logarithmic Gain/Attenuator]
分类和应用: 电信集成电路光电二极管衰减器
文件页数/大小: 11 页 / 158 K
品牌: MICRO-LINEAR [ MICRO LINEAR CORPORATION ]
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ML2008, ML2009  
desired gain setting. The relationship between the register  
0 and 1 bits and the corresponding analog gain values is  
shown in Tables 1 and 2. Note that C3-C0 select the  
coarse gain, F3-F0 select the fine gain, and ATTEN/GAIN  
selects either gain or attenuation.  
1.4 Power Supplies  
The digital section is powered between V and GND,  
CC  
or 5V. The analog section is powered between V and  
CC  
V
SS  
and uses AGND as the reference point, or ±5V.  
GND and AGND are totally isolated inside the device to  
minimize coupling from the digital section into the analog  
section. Typically this is less than 100µV. However, AGND  
and GND should be tied together physically near the  
device and ideally close to the common power supply  
ground connection.  
1.3 Output Buffer  
The final analog stage is the output buffer. This amplifier  
has internal gain of 1 and is designed to drive 600,  
100pF loads. Thus, it is suitable for driving a telephone  
hybrid circuit directly without any external amplifier.  
Typically, the power supply rejection of V and V  
CC  
SS  
to the analog output is greater than –60dB at 1KHz. If  
decoupling of the power supplies is still necessary in a  
system, V and V should be decoupled with respect  
CC  
SS  
to AGND.  
Table 1. Fine Gain Settings (C3 – C0 = 0)  
Ideal Gain (dB)  
Table 2. Coarse Gain Settings (F3 – F0 = 0)  
Ideal Gain (dB)  
C3 C2 C1 C0 ATTEN/GAIN = 1 ATTEN/GAIN = 0  
F3  
F2  
F1  
F0 ATTEN/GAIN = 1 ATTEN/GAIN = 0  
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0.0  
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
1.5  
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0.0  
–1.5  
–3.0  
–4.5  
–6.0  
–7.5  
–9.0  
–10.5  
–12.0  
–13.5  
–15.0  
–16.5  
–18.0  
–19.5  
–21.0  
–22.5  
0.0  
1.5  
3.0  
4.5  
6.0  
–0.1  
–0.2  
–0.3  
–0.4  
–0.5  
–0.6  
–0.7  
–0.8  
–0.9  
–1.0  
–1.1  
–1.2  
–1.3  
–1.4  
–1.5  
7.5  
9.0  
10.5  
12.0  
13.5  
15.0  
16.5  
18.0  
19.5  
21.0  
22.5  
2.0 DIGITAL INTERFACE  
The architecture of the digital section is shown in the  
preceding black diagram.  
down. In this state, the power consumption is reduced by  
removing power from the analog section and forcing the  
analog output, V  
, to a high impedance state. While the  
OUT  
The structure of the data registers or latches is shown in  
Figures 10 and 11 for the ML2008 and ML2009,  
respectively. The registers control the attenuation/gain  
setting bits and with the ML2008 the power down bit.  
device is in powerdown, the digital section is still  
functional and the current data word remains stored in the  
registers. When PDN = 0, device is in normal operation.  
The ML2009 is a 9-bit data bus version. This device has  
one 9-bit register to store the 9 gain setting bits. The full 9  
data bits can be programmed with one write operation  
from nine external data pins.  
Tables 1 and 2 describe how the data word programs the  
gain.  
The difference between the ML2008 and ML2009 is in the  
register structure. The ML2008 is an 8-bit data bus  
version. This device has one 8-bit register and one 2-bit  
register to store the 9 gain setting bits and 1 powerdown  
bit. Two write operations are necessary to program the full  
10 data bits from eight external data pins. The address pin  
A0 controls which register is being written into. The  
powerdown bit, PDN, causes the device to be placed in  
powerdown. When PDN = 1, the device is powered  
The internal registers or latches are edge triggered. The  
data is transferred from the external pins to the register  
output on the rising edge of WR. The address pin, A0,  
controls which register the data will be written into as  
shown in Figures 1 and 2. The CS control signal selects  
the device by allowing the WR signal to latch in the data  
only when CS is low. When CS is high, WR is inhibited  
from latching in new data into the registers.  
7