2N7000
Fig 2. Transfer Characteristics
Fig 1. On-State Characteristics
VGS
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Top :
100
10-1
100
10-1
100 Bottom : 3.0 V
150oC
-55oC
4
※ Notes :
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
25oC
1. VDS = 10V
2. 250µ s Pulse Test
100
101
0
2
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
3.0
2.5
2.0
1.5
1.0
VGS = 4.5V
VGS = 10V
150℃
25℃
※ Notes :
1. VGS = 0V
※ Note : T = 25℃
2. 250µ s Pulse Test
J
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Fig 6. Gate Charge Characteristics
Fig 5. Capacitance Characteristics
50
40
30
20
10
0
12
10
8
C
iss=Cgs+Cgd(Cds=shorted)
oss=Cds+Cgd
Crss=Cgd
C
VDS = 30V
VDS = 48V
※ Notes :
1. VGS = 0V
2. f=1MHz
6
C
iss
Coss
4
2
C
rss
※ Note : ID = 200 mA
1.0
0
0
5
10
15
20
25
30
0.0
0.2
0.4
0.6
0.8
1.2
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3/6
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MICREL [ MICREL SEMICONDUCTOR ]
