PRELIMINARY
SemiWell Semiconductor
2N7000
Logic N-Channel MOSFET
Features
3. Drain
Symbol
{
■ RDS(on) (Max 5 Ω )@VGS=10V
RDS(on) (Max 5.3Ω )@VGS=4.5V
●
◀
▲
■ Gate Charge (Typical 0.5nC)
■ Maximum Junction Temperature Range (150°C)
●
●
2. Gate
{
{
1. Source
TO-92
General Description
This Power MOSFET is produced using planar DMOS technology.
And this Power MOSFET is well suited for Battery switch, Load
switch, Motor controller and other small signal switches.
1
2
3
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
Value
60
Units
V
Drain to Source Voltage
Continuous Drain Current(@TA = 25°C)
Drain Current Pulsed
200
mA
mA
V
IDM
(Note 1)
500
VGS
Gate to Source Voltage
±20
0.4
Total Power Dissipation Single Operation (TA=25°C)
Total Power Dissipation Single Operation (TA=70°C)
Operating Junction Temperature & Storage Temperature
W
mW
°C
PD
3.2
T
STG, TJ
- 55 ~ 150
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 10 seconds.
TL
300
°C
Thermal Characteristics
Value
Typ.
Symbol
Parameter
Units
Min.
Max.
RθJA
Thermal Resistance, Junction-to-Ambient
-
-
312.5
°C/W
January, 2003. Rev. 0.
1/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
MICREL [ MICREL SEMICONDUCTOR ]
