WF2M16-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS – WE# CONTROLLED
-90
-120
-150
Parameter
Symbol
Unit
Min
90
0
Max
Min
120
0
Max
Min
150
0
Max
Write Cycle Time
tAVAV
tELWL
tWC
tCS
tWP
tAS
ns
ns
Chip Select Setup Time
Write Enable Pulse Width
Address Setup Time
tWLWH
tAVWL
tDVWH
tWHDX
tWLAX
tWHWL
tWHWH1
tWHWH2
tGH
45
0
50
0
50
0
ns
ns
Data Setup Time
tDS
45
0
50
0
50
0
ns
Data Hold Time
tDH
tAH
ns
Address Hold Time
45
20
50
20
50
20
ns
Write Enable Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase (2)
tWPH
ns
300
15
300
15
300
15
μs
sec
μs
μs
sec
sec
ns
Read Recovery Time before Write
0
0
0
W
L
VCC Setup Time
tVCS
50
50
50
Chip Programming Time
Chip Erase Time (3)
44
44
44
256
256
256
Output Enable Hold Time (4)
RESET# Pulse Width
tOEH
tRP
10
10
10
500
500
500
ns
NOTES:
1. Typical value for tWHWH1 is 7μs.
2. Typical value for tWHWH2 is 1sec.
3. Typical value for Chip Erase Time is 32sec.
4. For Toggle and Data Polling.
AC CHARACTERISTICS – READ-ONLY OPERATIONS
-90
-120
-150
Parameter
Symbol
Unit
Min
90
Max
Min
120
Max
Min
150
Max
Read Cycle Time
TAVAV
TAVQV
TELQV
TGLQV
TEHQZ
TGHQZ
TAXQX
TRC
TACC
TCE
TOE
TDF
TDF
TOH
ns
ns
ns
ns
ns
ns
ns
Address Access Time
90
90
40
20
20
120
120
50
150
150
55
Chip Select Access Time
Output Enable to Output Valid
Chip Select High to Output High Z (1)
Output Enable High to Output High Z (1)
30
35
30
35
Output Hold from Addresses, CS# or OE# Change,
whichever is First
0
0
0
TREADY
20
20
20
μs
RESET# Low to Read Mode (1)
1. Guaranteed by design, not tested.
3
4334.12E-0816-ss-WF2M16-XXX5
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com