WF2M16-XXX5
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
VT
Ratings
-2.0 to +7.0
-65 to +150
20
Unit
V
Parameter
Symbol
Conditions
Max Unit
Voltage on Any Pin Relative to VSS
Storage Temperature
Data Retention (Mil Temp)
Endurance — write/erase cycles (Mil, Q)
NOTES:
1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, inputs may
overshoot VSS to –2.0 V for periods of up to 20 ns. See . Maximum DC voltage on output and
I/O pins is VCC + 0.5 V. During voltage transitions, outputs may overshoot to VCC + 2.0 V for
periods up to 20 ns. See .
OE# capacitance
WE# capacitance
CS# capacitance
Data I/O capacitance
Address input capacitance
COE
CWE
CCS
CI/O
CAD
VIN = 0V, f = 1.0 MHz
VIN = 0V, f = 1.0 MHz
VIN = 0V, f = 1.0 MHz
VI/O = 0V, f = 1.0 MHz
VIN = 0V, f = 1.0 MHz
25
25
15
15
25
pF
pF
pF
pF
pF
TSTG
°C
years
cycles
100,000 min.
This parameter is guaranteed by design but not tested.
2. Minimum DC input voltage on A9, OE#, RESET# pins is –0.5V. During voltage transitions, A9,
OE#, RESET# pins may overshoot VSS to –2.0 V for periods of up to 20 ns. See Maximum DC
input voltage on A9, OE#, and RESET# is 12.5 V which may overshoot to 13.5 V for periods up
to 20 ns.
Stresses greater than those listed in this section may cause permanent damage to the device. This
is a stress rating only; functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure of the device to
absolute maximum rating conditions for extended periods may affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
Parameter
Symbol
VCC
Min
4.5
Typ
5.0
Max
5.5
Unit
V
Supply Voltage
Ground
VSS
VIH
VIL
TA
0
0
–
–
–
–
–
0
V
Input High Voltage
Input Low Voltage
2.0
-0.5
-55
-40
0
VCC + 0.5
+0.8
V
V
Operating Temperature (Mil, Q)
Operating Temperature (Ind)
Operating Temperature (Com)
+125°C
+85
°C
°C
°C
TA
TA
+70
DC CHARACTERISTICS – CMOS COMPATIBLE
Parameter
Symbol
ILI
Conditions
VCC = VCC MAX, VIN = GND to VCC
VCC = VCC MAX, VOUT = GND to VCC
CS# = VIL, OE# = VIH, f = 5MHz
Min
Max
10
Unit
Input Leakage Current
Output Leakage Current
μA
μA
mA
mA
mA
V
ILO
10
V
CC Active Current for Read (1)
VCC Active Current for Program or Erase (2)
CC Standby Current
ICC1
ICC2
ICC3
VOL
80
CS# = VIL, OE# = VIH
120
4.0
0.45
V
VCC = VCC MAX, CS# = VCC ± 0.5V, f = 5MHz, RESET# = VCC ± 0.5V
IOL = 12.0 mA, VCC = VCC MIN
Output Low Voltage
Output High Voltage
Low VCC Lock-Out Voltage
NOTES:
VOH
VLKO
IOH = -2.5 mA, VCC = VCC MIN
0.85xVCC
3.2
V
4.2
V
1. The Icc current is typically less than 4mA/MHz, with OE# at VIH.
2. CC active while Embedded Algorithm (program or erase) is in progress.
I
2
4334.12E-0816-ss-WF2M16-XXX5
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
MERCURY [ MERCURY UNITED ELECTRONICS INC ]
