WEDPN16M64V-XB2X
PRELIMINARY
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE
(NOTE 2)
Parameter
Unit
V
Voltage on VCC, VCCQSupply relative to VSS
Voltage on NC or I/O pins relative to VSS
Operating Temperature TA (Mil)
-1 to 4.6
-1 to 4.6
Parameter
Symbol
CI1
Max
6
Unit
pF
V
Input Capacitance: CLK
-55 to +125
-40 to +85
-55 to +125
°C
°C
°C
Addresses, BA0-1 Input Capacitance
Input Capacitance: All other input-only pins
Input/Output Capacitance: I/Os
CA
18
7
pF
Operating Temperature TA (Ind)
CI2
pF
Storage Temperature, Plastic
CIO
7
pF
NOTE:
Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions greater than those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
BGA THERMAL RESISTANCE
Description
Symbol
JA
Max
15.6
10.1
7.8
Unit
°C/W
°C/W
°C/W
Notes
Junction to Ambient (No Airflow)
Junction to Ball
1
1
1
JB
Junction to Case (Top)
JC
NOTE: Refer to AN #0001 at www.whiteedc.com in the application notes section for modeling
conditions.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(NOTES 1, 6)
VCC = +3.3V ±0.3V; -55°C ≤ TA ≤ +125°C
Parameter/Condition
Symbol
Min
3
Max
Units
V
Supply Voltage
VCC
VIH
VIL
II
3.6
Input High Voltage: Logic 1; All inputs (21)
2
VCC + 0.3
V
Input Low Voltage: Logic 0; All inputs (21)
-0.3
-5
0.8
5
V
Input Leakage Current: Any input 0V VIN VCC (All other pins not under test = 0V)
Input Leakage Address Current: Any input 0V VIN VCC (All other pins not under test = 0V)
Output Leakage Current: I/Os are disabled; 0V VOUT VCC
μA
μA
μA
V
II
-20
-5
20
5
IOZ
VOH
Output Levels:
2.4
–
Output High Voltage (IOUT = -4mA)
Output Low Voltage (IOUT = 4mA)
VOL
–
0.4
V
IDD SPECIFICATIONS AND CONDITIONS
(NOTES 1,6,11,13)
VCC = +3.3V ±0.3V; -55°C ≤ TA ≤ +125°C
Parameter/Condition
Symbol
Max
Units
Operating Current: Active Mode;
Burst = 2; Read or Write; tRC = tRC (min); CAS latency = 3 (3, 18, 19)
ICC1
500
mA
Standby Current: Active Mode; CKE = HIGH; CS = HIGH;
All banks active after tRCD met; No accesses in progress (3, 12, 19)
ICC3
160
mA
Operating Current: Burst Mode; Continuous burst;
Read or Write; All banks active; CAS latency = 3 (3, 18, 19)
ICC4
ICC7
540
10
mA
mA
Self Refresh Current: CKE 0.2V (commercial and industrial temperature only)(27)
Microsemi Corporation reserves the right to change products or specifications without notice.
July 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 1
8
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
MERCURY [ MERCURY UNITED ELECTRONICS INC ]
