WEDPN16M64V-XB2X
PRELIMINARY
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CHARACTERISTICS
(NOTES 5, 6, 8, 9, 11)
-100
-125
-133
Parameter
Symbol
Min
Unit
Max
7
Min
Max
6
Min
Max
5.5
6
CL = 3
CL = 2
t
t
AC (3)
AC (2)
tAH
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ns
ns
ns
ns
Access time from CLK (pos. edge) (28)
7
6
Address hold time
Address setup time
CLK high-level width
CLK low-level width
1
2
1
2
0.8
1.5
2.5
2.5
7.5
10
tAS
tCH
3
3
tCL
3
3
CL = 3
CL = 2
tCK (3)
tCK (2)
tCKH
tCKS
10
13
1
8
Clock cycle time (22)
10
1
CKE hold time
0.8
1.5
0.8
1.5
0.8
1.5
CKE setup time (30)
2
2
CS#, RAS#, CAS#, WE#, DQM hold time
CS#, RAS#, CAS#, WE#, DQM setup time
Data-in hold time
tCMH
tCMS
tDH
1
1
2
2
1
1
Data-in setup time
tDS
2
2
CL = 3 (10)
CL = 2 (10)
tHZ (3)
tHZ (2)
tLZ
7
7
6
6
5.5
6
Data-out high-impedance time (10)
Data-out low-impedance time
1
3
1
3
1
3
Data-out hold time (load)
tOH
Data-out hold time (no load) (29)
ACTIVE to PRECHARGE command
ACTIVE to ACTIVE command period
ACTIVE to READ or WRITE delay
Refresh period (8,192 rows) – Commercial, Industrial
Refresh period (8,192 rows) – Military
AUTO REFRESH period
tOH
1.8
50
70
20
1.8
50
68
20
1.8
50
68
20
N
tRAS
tRC
120,000
120,000
120,000
tRCD
tREF
tREF
tRFC
tRP
64
16
64
16
64
16
70
20
20
0.3
70
20
20
0.3
70
20
20
0.3
PRECHARGE command period
ACTIVE bank A to ACTIVE bank B command
Transition time (7)
tRRD
tT
1.2
1.2
1.2
1 CLK +
7ns
1 CLK +
7ns
1 CLK +
7.5ns
(23)
(24)
—
WRITE recovery time
tWR
15
80
15
80
15
75
ns
ns
Exit SELF REFRESH to ACTIVE command (20)
tXSR
Microsemi Corporation reserves the right to change products or specifications without notice.
July 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 1
9
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
MERCURY [ MERCURY UNITED ELECTRONICS INC ]
