WEDF1M32B-XXX5
AC CHARACTERISTICS – WRITE OPERATIONS – CS# CONTROLLED(1)
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol -70
-90
-120
Unit
Min
70
0
Max
Min
90
0
Max
Min
120
0
Max
Write Enable Cycle Time
Write Enable Setup Time
Chip Select Pulse Width
Address Setup Time
tAVAV
tWLEL
tELEH
tWC
tWS
tCP
ns
ns
ns
ns
ns
ns
ns
ns
μs
sec
μs
μs
35
0
45
0
50
0
tAVEH
tAS
Data Setup Time
tDVEH
tEHDX
tEHAX
tEHWH
tEHEL
tDS
30
0
45
0
50
0
Data Hold Time
tDH
tAH
tWH
tEPH
Address Hold Time
45
0
45
0
50
0
Write Enable Hold Time
Chip Select Pulse Width High
Programming Operation (1)
Sector Erase Operation (2)
Write Recovery before Read
20
20
20
tWHWH1
tWHWH2
tEHGL
300
8
300
8
300
8
0
0
0
NOTES:
1. Typical value for tWHWH1 is 7μs.
2. Typical value for tWHWH2 is 1sec.
AC CHARACTERISTICS – READ-ONLY OPERATIONS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
-70
-90
-120
Unit
Min
Max
Min
Max
Min
Max
Read Cycle Time
tAVAV
tAVQV
tELQV
tRC
tACC
tCE
tOE
tLZ
70
90
120
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
70
70
30
90
90
35
120
120
50
Chip Select to Output Valid (1)
Output Enable to Output Valid (1)
Chip Select to Output Low Z (2)
Chip Select High to Output High Z (2)
Output Enable to Output Low Z (2)
Output Enable High to Output High Z (2)
tGLQV
tELQX
tEHQZ
tGLQX
tGHQZ
0
0
0
0
0
0
0
0
0
tHZ
20
20
20
20
50
30
tOLZ
tDF
Output Hold from Addresses, CS# or OE#
Change, Whichever is First (2)
tOH
NOTES:
1. OE# may be delayed up to tCE-tOE after the falling edge of CS# without impact on tCS
.
2. Guaranteed by design, not tested.
5
4338.06E-0816-ss-WEDF1M32B-XXX5
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com