WEDF1M32B-XXX5
DC CHARACTERISTICS – CMOS COMPATIBLE
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
Conditions
Min
Max
10
Unit
μA
μA
mA
mA
μA
V
Input Leakage Current
Output Leakage Current
ILI
VIN = VCC to GND
ILO
VOUT = VCC to GND
10
VCC Read Current (1, 2)
VCC Write Current (2, 3 ,4)
VCC Standby Current (2, 5)
ICC1
ICC2
ICC3
VOL
VOH
VLKO
CS# = VIL, OE# = VIH, f = 5MHz, IOUT = 0mA
CS# = VIL, OE# = VIH
160
200
20.0
0.45
CS# = RESET# = OE# = CS = VIH, f = 5MHz
VCC = 4.5, IOL = 4.0 mA
Output Low Voltage
Output High Voltage
Low VCC Lock-Out Voltage (4)
NOTES:
VCC = 4.5, IOH = -2.5 mA
2.4
3.2
V
4.2
V
1. The ICC current listed is typically less than 2mA/MHz, with OE# at VIH
.
2. Maximum ICC specifications are tested with VCC = VCC max
3.
4. Not 100% tested.
5. CC3 = 20μA max at extended temperature (> +85°C).
ICC active while Embedded Erase or Embedded Program is in progress.
I
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS – CS# CONTROLLED
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
-70
-90
-120
Unit
Min
Max
Min
Max
Min
Max
tAVAV
tELWL
tWLWH
tAVWH
tWC
tCS
tWP
tAS
70
90
120
ns
ns
Write Cycle Time
0
345
0
0
45
0
0
50
0
Chip Select Setup Time
Write Enable Pulse Width
Address Setup Time
ns
ns
tDVWH
tWHDX
tWLAX
tDS
35
0
45
0
50
0
ns
Data Setup Time
tDH
tAH
tCH
tWPH
ns
Data Hold Time
45
0
45
0
50
0
ns
Address Hold Time
tWHEH
tWHWL
tWHWH1
tWHWH2
tWHECL
ns
Chip Select Hold Time
Write Enable Pulse Width High
Programming Operation (2)
Sector Erase Operation (3)
Write Recovery before Read
Chip Programming Time
20
20
20
NS
μs
sec
μs
sec
300
8
300
8
300
8
0
0
0
50
50
50
NOTES:
1. Guaranteed by design, not tested.
2. Typical value for tWHWH1 is 7μs.
3. Typical value for tWHWH2 is 1sec.
4
4338.06E-0816-ss-WEDF1M32B-XXX5
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
MERCURY [ MERCURY UNITED ELECTRONICS INC ]
