WE512K8, WE256K8,
WE128K8-XCX
256Kx8 CMOS EEPROM, WE256K8-XCX, SMD 5962-93155
256KX8 BIT CMOS EEPROM MODULE
FEATURES
Read Access Times of 150, 200ns
• Internal Address and Data Latches for
• 512 Bytes, 1 to 64 Bytes/Row, Eight Pages
Page Write Cycle Time 10mS Max.
Data Polling for End of Write Detection
Hardware and Software Data Protection
TTL Compatible Inputs and Outputs
JEDEC Standard 32 Pin, Hermetic Ceramic DIP (Package
302)
Commercial, Industrial and Military Temperature Ranges
MIL-STD-883 Compliant Devices Available
Write Endurance 10,000 Cycles
Data Retention at 25°C, 10 Years
Low Power CMOS Operation:
• 2mA Standby Typical/90mA Operating Maximum
Automatic Page Write Operation
FIGURE 2 – PIN CONFIGURATION
TOP VIEW
PIN DESCRIPTION
A0-18
I/O0-7
CS#
OE#
WE#
VCC
Address Inputs
Data Input/Output
Chip Select
Output Enable
Write Enable
+5.0V Power
Ground
NC
A16
A15
A12
A7
1
2
3
4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
WE#
A17
A14
A13
A8
VSS
BLOCK DIAGRAM
5
A6
6
A0-14
I/O0-7
A5
7
A9
A4
A3
A2
A1
8
9
A11
OE#
A10
CS#
I/O7
I/O6
I/O5
I/O4
I/O3
WE#
OE#
10
11
12
13
14
15
16
8
1
2
A0
32K x 8
32K x 8
32K x 8
I/O0
I/O1
I/O2
VSS
A15
A16
A17
Decoder
CS#
Microsemi Corporation reserves the right to change products or specifications without notice.
August 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 4
2
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
MERCURY [ MERCURY UNITED ELECTRONICS INC ]
