WE512K8, WE256K8,
WE128K8-XCX
512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091
512Kx8 BIT CMOS EEPROM MODULE
FEATURES
Read Access Times of 150, 200, 250, 300ns
JEDEC Standard 32 Pin, Hermetic Ceramic DIP (Package
300)
Commercial, Industrial and Military Temperature Ranges
MIL-STD-883 Compliant Devices Available
Write Endurance 10,000 Cycles
Data Retention at 25°C, 10 Years
Low Power CMOS Operation:
• 3mA Standby Typical/100mA Operating Maximum
Automatic Page Write Operation
• Internal Address and Data Latches for
• 512 Bytes, 1 to 128 Bytes/Row, Four Pages
Page Write Cycle Time 10mS Max.
Data Polling for End of Write Detection
Hardware and Software Data Protection
TTL Compatible Inputs and Outputs
FIGURE 1 – PIN CONFIGURATION
TOP VIEW
A0-18
I/O0-7
CS#
OE#
WE#
V
CC
V
SS
PIN DESCRIPTION
Address Inputs
Data Input/Output
Chip Select
Output Enable
Write Enable
+5.0V Power
Ground
A18
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
WE#
A17
A14
A13
A8
A9
A11
OE#
A10
CS#
I/O7
I/O6
I/O5
I/O4
I/O3
BLOCK DIAGRAM
A
0-16
I/O
0-7
WE#
OE#
128K x 8
128K x 8
128K x 8
128K x 8
A
17
A
18
CS#
Decoder
Microsemi Corporation reserves the right to change products or specifications without notice.
August 2011
Rev. 4
© 2011 Microsemi Corporation. All rights reserved.
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
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