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WE512K8-300CIA 参数 Datasheet PDF下载

WE512K8-300CIA图片预览
型号: WE512K8-300CIA
PDF下载: 下载PDF文件 查看货源
内容描述: [EEPROM Module,]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
文件页数/大小: 14 页 / 1145 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
 浏览型号WE512K8-300CIA的Datasheet PDF文件第2页浏览型号WE512K8-300CIA的Datasheet PDF文件第3页浏览型号WE512K8-300CIA的Datasheet PDF文件第4页浏览型号WE512K8-300CIA的Datasheet PDF文件第5页浏览型号WE512K8-300CIA的Datasheet PDF文件第7页浏览型号WE512K8-300CIA的Datasheet PDF文件第8页浏览型号WE512K8-300CIA的Datasheet PDF文件第9页浏览型号WE512K8-300CIA的Datasheet PDF文件第10页  
WE512K / 256K / 128K8-XCX  
WRITE  
WRITE CYCLE TIMING  
Write operations are initiated when both CS# and WE# are low  
and OE# is high. The EEPROM devices support both a CS# and  
WE# controlled write cycle. The address is latched by the falling  
edge of either CS# or WE#, whichever occurs last.  
Figures 6 and 7 show the write cycle timing relationships. A write  
cycle begins with address application, write enable and chip select.  
Chip select is accomplished by placing the CS# line low. Write  
enable consists of setting the WE line low. The write cycle begins  
when the last of either CS# or WE# goes low.  
The data is latched internally by the rising edge of either CS#  
or WE#, whichever occurs first. A byte write operation will  
automatically continue to completion.  
The WE# line transition from high to low also initiates an internal  
150μsec delay timer to permit page mode operation. Each  
subsequent WE# transition from high to low that occurs before the  
completion of the 150μsec time out will restart the timer from zero.  
The operation of the timer is the same as a retriggerable one-shot.  
AC WRITE CHARACTERISTICS  
VCC = 5.0V, VSS = 0V, -55°C TA +125°C  
512K x 8  
256K x 8  
128K x 8  
Parameter  
Symbol  
Unit  
Min  
Max  
Min  
Max  
Min  
Max  
Write Cycle Time, TYP = 6mS  
Address Set-up Time  
Write Pulse Width (WE# or CS#)  
Chip Select Set-up Time  
Address Hold Time (1)  
Data Hold Time  
tWC  
tAS  
tWP  
tCS  
10  
10  
10  
ms  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
10  
150  
0
30  
150  
0
30  
150  
0
tAH  
125  
10  
0
50  
0
50  
0
tDH  
Chip Select Hold Time  
Data Set-up Time  
tCH  
0
0
tDS  
100  
10  
10  
50  
100  
30  
0
100  
30  
0
Output Enable Set-up Time  
Output Enable Hold Time  
Write Pulse Width High  
NOTES:  
tOES  
tOEH  
tWPH  
50  
50  
1. A17 and A18 must remain valid through WE# and CS# low pulse, for 512K x 8.  
A15, A16, and A17 must remain valid through WE# and CS# low pulse, for 256K x 8.  
A15 and A16 must remain valid through WE# and CS# low pulse, for 128K x 8.  
6
4312.08E-0718-ss-WE512K_256K_128K8-XCX  
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com