WE32K32-XXX
PAGE WRITE OPERATION
The WE32K32-XXX has a page write operation that allows one
to 64 bytes of data to be written into the device and consecutively
loads during the internal programming period. Successive bytes
may be loaded in the same manner after the first data byte has
been loaded.An internal timer begins a time out operation at each
write cycle. If another write cycle is completed within 150μs or less,
a new time out period begins. Each write cycle restarts the delay
period. The write cycles can be continued as long as the interval
is less than the time out period.
The usual procedure is to increment the least significant address
lines fromA0 throughA5 at each write cycle. In this manner a page
of up to 64 bytes can be loaded in to the EEPROM in a burst mode
before beginning the relatively long interval programming cycle.
After the 150μs time out is completed, the EEPROM begins an
internal write cycle. During this cycle the entire page of bytes will
be written at the same time. The internal programming cycle is the
same regardless of the number of bytes accessed.
PAGE WRITE CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
PAGE MODE WRITE CHARACTERISTICS
Parameter
-80
-90
-120
-150
Symbol
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Write Cycle Time, TYP = 6ms
Data Set-up Time
tWC
tDS
10
10
10
10
ms
ns
ns
ns
μs
ns
50
0
50
0
100
10
100
10
Data Hold Time
tDH
Write Pulse Width
tWP
tBLC
tWPH
100
100
150
150
Byte Load Cycle Time
Write Pulse Width High
150
150
150
150
50
50
50
50
FIGURE 8 – PAGE WRITE WAVEFORMS
OE#
CS#
tWP
tWP
tWP
WE#
tDS
ADDRESS (1)
DATA
VALID
ADDRESS
tWC
VALID DATA
BYTE 0
BYTE 1
BYTE 2
BYTE 3
BYTE n
BYTE n + 1
NOTE:
1. Decoded Address Lines must be valid for the duration of the write.
Microsemi Corporation reserves the right to change products or specifications without notice.
August 2014 © 2014 Microsemi Corporation. All rights reserved.
Rev. 9
8
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
MERCURY [ MERCURY UNITED ELECTRONICS INC ]
