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W764M32V-100SBM 参数 Datasheet PDF下载

W764M32V-100SBM图片预览
型号: W764M32V-100SBM
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 64MX32, 100ns, PBGA107, BGA-107]
分类和应用: 内存集成电路
文件页数/大小: 16 页 / 919 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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W764M32V-XSBX
Not Recommended for New Designs — Replaced by W764M32V1-XBX
64Mx32 NOR Flash Multi-Chip Package 3.0V Page Mode Flash Memory
FEATURES

Single power supply operation
• 3 volt read, erase, and program operations

I/O Control
• All input levels (address, control, and DQ input levels)
and outputs are determined by voltage on V
IO
input. V
IO
range is 1.65 to V
CC

Secured Silicon Sector region
• 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a command
sequence
• May be programmed and locked at the factory or by the
customer

Flexible sector architecture
• Five hundred twelve 64 Kword (128 Kbyte) sectors
• Two hundred fifty-six 64 Kword (128 Kbyte) sectors
• One hundred twenty-eight 64 Kword (128 Kbyte) sectors

Compatibility with JEDEC standard
• Provides software compatibility for single-power supply
flash, and superior inadvertent write protection

100,000 erase cycles per sector typical

20-year data retention typical

Hardware features
• Advanced Sector Protection
• WP#/ACC input accelerates programming time (when
high voltage is applied) for greater throughput during
system production. Protects first or last sector regardless
of sector protection settings
• Hardware reset input (RESET#) resets device
• Ready/Busy# output (RY/BY#) detects program or erase
cycle completion
* This product is subject to change without notice.
GENERAL DESCRIPTION
The W764MB2V-XSBX device is a 3.0V single power flash
memory. The device utilizes four organized as 33,554,432 words
or 67, 108,864 bytes. The device has a 32-bit wide data bus, can
be programmed either in the host system or in standard EPROM
programmers.
Each device requires a single 3.0 volt power supply for both
read and write functions. In addition to a V
CC
input, a high-
voltage accelerated program (WP# / ACC) input provides shorter
programming times through increased current. This feature is
intended to facilitate factory throughput during system production,
but may also be used in the field if desired.
The devices are entirely command set compatible with the JEDEC
single power-supply Flash standard. Commands are written to
the device using standard microprocessor write timing. Write
cycles also internally latch addresses and data needed for the
programming and erase operations.
The sector erase architecture allows memory sectors to be erased
and reprogrammed without affecting the data contents of other
sectors. The device is fully erased when shipped from the factory.
Device programming and erasure are initiated through command
sequences. Once a program or erase operation has begun, the
host system need only poll the DQ7 (Data# Polling) or DQ6
(toggle) status bits or monitor the Ready / Busy# (RY / BY#)
output to determine whether the operation is complete. To facilitate
programming, an Unlock Bypass mode reduces command
sequence over head by requiring only two write cycles to program
data instead of four.
The I/O (V
IO
) control allows the host system to set the voltage levels
that the device generates and tolerates on all input levels (address,
chip control, and DQ input levels) to the same voltage level that
is asserted on the V
IO
pin. This allows the device to operate in a
1.8 V or 3 V system environment as required.
Hardware data protection measures include a low V
CC
detector
that automatically inhibits write operations during power transitions.
Persistent Sector Protection provides in-system, comand-enabled
protection of any combination of sectors using a single power
PERFORMANCE CHARACTERISTICS

High Performance
• 100, 120 ns
• 8-word/16-byte page read buffer
• 25 ns page read times
• 16-word/32-byte write buffer reduces overall
programming time for multiple-word updates

Package option
• 107 BGA, 14mm x 17mm
• 1.0mm pitch

Software features
• Program Suspend and Resume: read other sectors
before programming operation is completed
• Erase Suspend and Resume: read/program other sectors
before an erase operation is completed
• Data# polling and toggle bits provide status
• Unlock Bypass Program command reduces overall
multiple-word programming time
• CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
Microsemi Corporation reserves the right to change products or specifications without notice.
June 2012
Rev. 10
© 2012 Microsemi Corporation. All rights reserved.
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
Not Recommended for New Designs — Replaced by W764M32V1-XBX