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W3H32M72E-533BI 参数 Datasheet PDF下载

W3H32M72E-533BI图片预览
型号: W3H32M72E-533BI
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX72, 0.65ns, CMOS, PBGA208, BGA-208]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 23 页 / 729 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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W3H32M72E-XBX / W3H32M72E-XBXF  
CAS LATENCY (CL)  
The CAS latency (CL) is dened by bits M4–M6, as shown in  
Figure 5. CL is the delay, in clock cycles, between the registration  
of a READ command and the availability of the rst bit of output  
data. The CL can be set to 3, 4, 5, 6 or 7 clocks, depending on the  
speed grade option being used.  
DDR2 SDRAM also supports a feature called posted CAS additive  
latency (AL). This feature allows the READ command to be issued  
prior to tRCD (MIN) by delaying the internal command to the DDR2  
SDRAM by AL clocks.  
Examples of CL= 3 and CL= 4 are shown in Figure 6; both assume  
AL = 0. If a READ command is registered at clock edge n, and the  
CL is m clocks, the data will be available nominally coincident with  
clock edge n+m (this assumes AL = 0).  
DDR2 SDRAM does not support any half-clock latencies. Reserved  
states should not be used as unknown operation or incompatibility  
with future versions may result.  
FIGURE 6 – CAS LATENCY (CL)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
CK#  
CK  
READ  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
COMMAND  
DQS, DQS#  
D
OUT  
D
OUT  
D
OUT  
DOUT  
n + 3  
DQ  
n
n + 1  
n + 2  
CL = 3 (AL = 0)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
CK#  
CK  
READ  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
COMMAND  
DQS, DQS#  
D
OUT  
D
OUT  
D
OUT  
DOUT  
n + 3  
DQ  
n
n + 1  
n + 2  
CL = 4 (AL = 0)  
Burst length = 4  
Posted CAS# additive latency (AL) = 0  
Shown with nominal tAC, tDQSCK and tDQSQ  
TRANSITIONING DATA  
DON’T CARE  
9
4154.03E-0716-ss-W3H32M72E-XBX-XBXF.  
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com