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W3H128M72E-667SBM 参数 Datasheet PDF下载

W3H128M72E-667SBM图片预览
型号: W3H128M72E-667SBM
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 128MX72, 1.25ns, CMOS, PBGA208, BGA-208]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 31 页 / 1024 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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W3H128M72E-XSBX / W3H128M72E-XNBX  
FIGURE 5 – MODE REGISTER (MR) DEFINITION  
MODE REGISTER (MR)  
The mode register is used to dene the specic mode of operation  
of the DDR2 SDRAM. This denition includes the selection of a  
burst length, burst type, CAS latency, operating mode, DLLRESET,  
write recovery, and power-down mode, as shown in Figure 5.  
Contents of the mode register can be altered by re-executing the  
LOAD MODE (LM) command. If the user chooses to modify only  
a subset of the MR variables, all variables must be programmed  
when the command is issued.  
BA2 BA1 BA0 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address Bus  
16 15 14 13 12 11 10  
9
7
6
5
4
3
2
1
0
8
Mode Register (Mx)  
0
MR  
0
PD  
WR  
DLL TM CAS# Latency BT Burst Length  
Mode  
Normal  
Test  
M7  
0
M2 M1 M0  
Burst Length  
Reserved  
Reserved  
4
The mode register is programmed via the LM command will  
retain the stored information until it is programmed again or the  
device loses power (except for bit M8, which is self-clearing).  
Reprogramming the mode register will not alter the contents of  
the memory array, provided it is performed correctly.  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
1
PD mode  
Fast Exit  
(Normal)  
Slow Exit  
M12  
0
DLL Reset  
No  
M8  
0
8
1
Reserved  
Reserved  
Reserved  
Reserved  
1
Yes  
(Low Power)  
The LM command can only be issued (or reissued) when all  
banks are in the precharged state (idle state) and no bursts are in  
progress. The controller must wait the specied time tMRD before  
initiating any subsequent operations such as anACTIVE command.  
Violating either of these requirements will result in unspecied  
operation.  
WRITE RECOVERY  
M11 M10 M9  
Reserved  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
2
3
4
5
6
7
8
Burst Type  
Sequential  
Interleaved  
M3  
0
1
BURST LENGTH  
CAS Latency (CL)  
M6 M5 M4  
Reserved  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Burst length is dened by bits M0–M2, as shown in Figure 5. Read  
and write accesses to the DDR2 SDRAM are burst-oriented, with  
the burst length being programmable to either four or eight. The  
burst length determines the maximum number of column locations  
that can be accessed for a given READ or WRITE command.  
Reserved  
Reserved  
Mode Register Definition  
Mode Register (MR)  
M15 M14  
3
4
5
6
7
0
1
0
1
0
0
1
1
Extended Mode Register (EMR)  
Extended Mode Register (EMR2)  
Extended Mode Register (EMR3)  
When a READ or WRITE command is issued, a block of columns  
equal to the burst length is effectively selected. All accesses for  
that burst take place within this block, meaning that the burst  
will wrap within the block if a boundary is reached. The block is  
uniquely selected by A2–Ai when BL = 4 and by A3–Ai when BL =  
8 (where Ai is the most signicant column address bit for a given  
conguration). The remaining (least signicant) address bit(s)  
is (are) used to select the starting location within the block. The  
programmed burst length applies to both READ and WRITE bursts.  
NOTE: Not all listed CL options are supported in any individual speed grades.  
BURST TYPE  
Accesses within a given burst may be programmed to be either  
sequential or interleaved. The burst type is selected via bit M3,  
as shown in Figure 5. The ordering of accesses within a burst is  
determined by the burst length, the burst type, and the starting  
column address, as shown in Table 2. DDR2 SDRAM supports  
4-bit burst mode and 8-bit burst mode only. For 8-bit burst mode,  
full interleaved address ordering is supported; however, sequential  
address ordering is nibble-based.  
7
4163.12E-0716-ss-W3H128M72E-XSBX / XNBX  
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com