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W3E32M64S-266SBI 参数 Datasheet PDF下载

W3E32M64S-266SBI图片预览
型号: W3E32M64S-266SBI
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX64, 0.75ns, CMOS, PBGA208, 13 X 22 MM, PLASTIC, BGA-208]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 18 页 / 648 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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W3E32M64S-XSBX  
White Electronic Designs  
FIGURE 2 FUNCTIONAL BLOCK DIAGRAM  
INITIALIZATION  
DDR SDRAMs must be powered up and initialized in a  
predefined manner. Operational procedures other than  
those specified may result in undefined operation. Power  
must first be applied to VCC and VCCQ simultaneously, and  
then to VREF (and to the system VTT). VTT must be applied  
after VCCQ to avoid device latch-up, which may cause  
permanent damage to the device. VREF can be applied any  
time after VCCQ but is expected to be nominally coincident  
with VTT. Except for CKE, inputs are not recognized as  
valid until after VREF is applied. CKE is an SSTL_2 input  
but will detect an LVCMOS LOW level after VCC is applied.  
After CKE passes through VIH, it will transition to an  
SSTL_2 signal and remain as such until power is cycled.  
Maintaining an LVCMOS LOW level on CKE during power-  
up is required to ensure that the DQ and DQS outputs will  
be in the High-Z state, where they will remain until driven  
in normal operation (by a read access). After all power  
supply and reference voltages are stable, and the clock  
is stable, the DDR SDRAM requires a 200μs delay prior  
to applying an executable command.  
WE  
0
RAS  
CAS  
0
0
WE RAS CAS  
REF  
V
REF  
V
A
0-12  
A0-12  
DQ  
0
DQ  
0
BA0-1  
CLK  
BA0-1  
=
Y
=
Y
CLK  
0
=
Y
=
Y
CLK  
CKE  
0
0
0
0
0
0
0
CLK  
=
Y
=
Y
U0  
CKE  
=
Y
=
Y
CS  
CS  
=
Y
=
Y
=
Y
=
Y
DQML  
DQMH  
DQSL  
DQSH  
DQML  
DQMH  
DQSL  
DQSH  
DQ15  
DQ15  
WE1  
RAS  
CAS  
1
1
WE RAS  
CAS  
V
REF  
A
0-12  
DQ  
0
DQ16  
BA0-1  
CLK  
CLK  
=
Y
=
Y
CLK  
1
=
Y
=
Y
CLK  
CKE  
1
1
1
1
1
1
1
=
Y
=
Y
U1  
CKE  
=
Y
=
Y
=
Y
CS  
CS  
=
Y
Once the 200μs delay has been satisfied, a DESELECT  
or NOP command should be applied, and CKE should  
be brought HIGH. Following the NOP command, a  
PRECHARGE ALL command should be applied. Next a  
LOAD MODE REGISTER command should be issued for  
the extended mode register (BA1 LOW and BA0 HIGH)  
to enable the DLL, followed by another LOAD MODE  
REGISTER command to the mode register (BA0/BA1  
both LOW) to reset the DLL and to program the operating  
parameters. Two-hundred clock cycles are required  
between the DLL reset and any READ command. A  
PRECHARGE ALL command should then be applied,  
placing the device in the all banks idle state.  
=
Y
=
Y
DQML  
DQMH  
DQSL  
DQSH  
DQML  
DQMH  
DQSL  
DQSH  
DQ15  
DQ31  
WE2  
RAS  
CAS  
2
2
WE RAS  
CAS  
V
REF  
A
0-12  
DQ  
0
DQ32  
BA0-1  
CLK  
=
Y
=
Y
CLK  
2
2
=
Y
=
Y
CLK  
CLK  
=
Y
=
Y
U2  
CKE  
CS  
2
2
2
2
CKE  
=
Y
=
Y
=
Y
CS  
=
Y
=
Y
=
Y
DQML  
DQMH  
DQML  
DQMH  
DQSL  
DQSH  
DQ15  
DQ47  
DQSL  
DQSH  
2
2
Once in the idle state, two AUTO REFRESH cycles must  
be performed (tRFC must be satisfied.)Additionally, a LOAD  
MODE REGISTER command for the mode register with  
the reset DLL bit deactivated (i.e., to program operating  
parameters without resetting the DLL) is required.  
Following these requirements, the DDR SDRAM is ready  
for normal operation.  
WE3  
RAS  
CAS  
3
3
WE RAS  
CAS  
V
REF  
A
0-12  
DQ  
0
DQ48  
BA0-1  
CLK  
CLK  
=
Y
=
Y
CLK  
3
=
Y
=
Y
CLK  
CKE  
3
3
3
3
3
3
3
=
Y
=
Y
U3  
=
Y
CKE  
=
Y
=
Y
=
Y
CS  
CS  
=
Y
=
Y
DQML  
DQMH  
DQSL  
DQSH  
DQML  
DQMH  
DQSL  
DQSH  
DQ15  
DQ63  
January 2008  
Rev. 6  
4
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com