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EDI88512CA55TI 参数 Datasheet PDF下载

EDI88512CA55TI图片预览
型号: EDI88512CA55TI
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 512KX8, 55ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 10 页 / 1121 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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EDI88512CA  
AC CHARACTERISTICS – READ CYCLE  
(VCC = 5.0V, Vss = 0V, -55°C TA +125°C)  
Symbol  
JEDEC  
15ns  
17ns  
20ns  
25ns  
35ns  
45ns  
55ns  
Parameter  
Alt.  
tRC  
Min Max  
Min Max  
Min Max  
Min Max  
Min Max  
Min Max  
Min Max Units  
Read Cycle Time  
tAVAV  
tAVQV  
tELQV  
tELQX  
15  
15  
15  
2
17  
17  
17  
3
20  
20  
20  
3
25  
25  
25  
3
35  
35  
35  
3
45  
45  
45  
3
55  
ns  
ns  
ns  
ns  
Address Access Time  
Chip Enable Access Time  
Chip Enable to Output in Low Z (1)  
tAA  
55  
55  
tACS  
tCLZ  
3
Chip Disable to Output in High Z (1)  
Output Hold from Address Change  
Output Enable to Output Valid  
tEHQZ  
tAVQX  
tGLQV  
tGLQX  
tGHQZ  
tCHZ  
tOH  
0
0
7
8
7
0
0
7
8
7
0
0
8
10  
8
0
0
10  
12  
10  
0
0
15  
15  
15  
0
0
20  
25  
20  
0
0
20  
30  
20  
ns  
ns  
ns  
ns  
ns  
tOE  
Output Enable to Output in Low Z (1)  
Output Disable to Output in High Z(1)  
tOLZ  
tOHZ  
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1. This parameter is guaranteed by design but not tested.  
AC CHARACTERISTICS – WRITE CYCLE  
(VCC = 5.0V, VSS = 0V, -55°CTA +125°C)  
Symbol  
JEDEC  
15ns  
Min Max  
15  
17ns  
Min Max  
17  
20ns  
Min Max  
20  
25ns  
Min Max  
25  
35ns  
45ns  
55ns  
Min Max Units  
Parameter  
Alt.  
Min Max  
Min Max  
Write Cycle Time  
tAVAV  
tWC  
35  
45  
55  
ns  
tELWH  
tELEH  
tCW  
tCW  
13  
13  
14  
14  
15  
15  
17  
17  
25  
25  
30  
30  
50  
50  
ns  
ns  
Chip Enable to End of Write  
Address Setup Time  
tAVWL  
tAVEL  
tAS  
tAS  
0
0
0
0
0
0
0
0
0
0
0
0
0
0
ns  
ns  
tAVWH  
tAVEH  
tAW  
tAW  
13  
13  
14  
14  
15  
15  
17  
17  
25  
25  
30  
30  
50  
50  
ns  
ns  
Address Valid to End of Write  
Write Pulse Width  
tWLWH  
tWLEH  
tWP  
tWP  
13  
13  
14  
14  
15  
15  
17  
17  
25  
25  
30  
30  
45  
45  
ns  
ns  
tWHAX  
tEHAX  
tWR  
tWR  
0
0
0
0
0
0
0
0
0
0
0
0
0
0
ns  
ns  
Write Recovery Time  
tWHDX  
tEHDX  
tDH  
tDH  
0
0
0
0
0
0
0
0
0
0
0
0
0
0
ns  
ns  
Data Hold Time  
Write to Output in High Z (1)  
Data to Write Time  
tWLQZ  
tWHZ  
0
8
0
8
0
8
0
10  
0
25  
0
30  
0
30  
ns  
tDVWH  
tDVEH  
tDW  
tDW  
8
8
8
8
10  
10  
12  
12  
20  
20  
25  
25  
40  
30  
ns  
ns  
Output Active from End of Write (1)  
tWHQX  
tWLZ  
0
0
0
0
0
0
0
ns  
1. This parameter is guaranteed by design but not tested.  
Microsemi Corporation reserves the right to change products or specications without notice.  
May 2014 © 2014 Microsemi Corporation. All rights reserved.  
Rev. 15  
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp