MX29LV800T/B
AC CHARACTERISTICS TA = -40oC to 85oC, VCC = 2.7V~3.6V
Table 10. Erase/Program Operations
29LV800T/B-70(R) 29LV800T/B-90
SYMBOL
tWC
PARAMETER
MIN.
70
0
MAX.
MIN.
90
0
MAX.
UNIT
ns
Write Cycle Time (Note 1)
Address Setup Time
tAS
ns
tAH
Address Hold Time
45
35
0
45
45
0
ns
tDS
Data Setup Time
ns
tDH
Data Hold Time
ns
tOES
tGHWL
Output Enable Setup Time
Read Recovery Time Before Write
(OE High to WE Low)
0
0
ns
0
0
ns
tCS
CE Setup Time
0
0
ns
ns
ns
ns
us
tCH
CE Hold Time
0
0
tWP
Write Pulse Width
35
30
35
30
tWPH
tWHWH1
Write Pulse Width High
ProgrammingOperation(Note2)
(Byte/Wordprogramtime)
Sector Erase Operation (Note 2)
VCC Setup Time (Note 1)
Recovery Time from RY/BY
Program/Erase Vaild to RY/BY Delay
Write Pulse Width for Sector Protect
(A9, OE Control)
9/11(TYP.)
9/11(TYP.)
tWHWH2
tVCS
0.7(TYP.)
0.7(TYP.)
sec
us
50
0
50
0
tRB
ns
tBUSY
tWPP1
90
90
ns
100ns
100ns
10us
100ns
100ns
10us
(Typ.)
12ms
(Typ.)
(Typ.)
12ms
(Typ.)
tWPP2
Write Pulse Width for Sector Unprotect
(A9, OE Control)
NOTES:
1. Not 100% tested.
2.See the "Erase and Programming Performance" section for more information.
3.29LV800T/B-70R operates atVCC=3.0V~3.6V.
P/N:PM0709
REV. 1.3, JAN. 24, 2002
24