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MX29LV800BXBC-90 参数 Datasheet PDF下载

MX29LV800BXBC-90图片预览
型号: MX29LV800BXBC-90
PDF下载: 下载PDF文件 查看货源
内容描述: 8M - BIT [ 1Mx8 / 512K X16 ] CMOS单电压3V仅限于Flash存储器 [8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY]
分类和应用: 存储
文件页数/大小: 60 页 / 1244 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX29LV800T/B  
AC CHARACTERISTICS TA = -40oC to 85oC, VCC = 2.7V~3.6V  
Table 9. READ OPERATIONS  
29LV800T/B-70(R) 29LV800T/B-90  
SYMBOL PARAMETER  
MIN.  
MAX.  
70  
MIN.  
MAX.  
90  
UNIT  
ns  
CONDITIONS  
tRC  
tACC  
tCE  
Read Cycle Time (Note 1)  
Address to Output Delay  
CE to Output Delay  
70  
90  
ns  
CE=OE=VIL  
OE=VIL  
70  
90  
ns  
tOE  
OE to Output Delay  
30  
35  
ns  
CE=VIL  
tDF  
OE High to Output Float (Note1)  
Output Enable Read  
0
0
25  
0
30  
ns  
CE=VIL  
tOEH  
0
ns  
Hold Time  
Toggle and Data Polling 10  
10  
0
ns  
tOH  
Address to Output hold  
0
ns  
CE=OE=VIL  
NOTE:  
1. Not 100% tested.  
TEST CONDITIONS:  
• Input pulse levels: 0V/3.0V.  
• Input rise and fall times is equal to or less than 5ns.  
• Outputload:1TTLgate+100pF(Includingscopeand  
jig), for29LV800T/B-90. 1TTL gate+30pF(Including  
scope and jig) for 29LV800T/B-70 and 29LV800T/B-  
70R.  
2. tDF is defined as the time at which the output achieves  
the open circuit condition and data is no longer driven.  
3.29LV800T/B-70R operates atVCC=3.0V~3.6V  
• Reference levels for measuring timing: 1.5V.  
P/N:PM0709  
REV. 1.3, JAN. 24, 2002  
21  
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