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MX29LV800CBTI-90 参数 Datasheet PDF下载

MX29LV800CBTI-90图片预览
型号: MX29LV800CBTI-90
PDF下载: 下载PDF文件 查看货源
内容描述: 8M - BIT [ 1Mx8 / 512K X16 ] CMOS单电压3V仅限于Flash存储器 [8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY]
分类和应用: 存储
文件页数/大小: 69 页 / 784 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX29LV800C T/B  
AC CHARACTERISTICS TA = -40oC to 85oC,VCC = 2.7V~3.6V (RestrictedVCC=3.0V~3.6V for 45R/55R)  
TABLE 10. READ OPERATIONS  
Parameter  
Std.  
Speed Options  
Description  
Test Setup  
45R 55R 70 90 Unit  
tRC  
Read CycleTime (Note 1)  
Address to Output Delay  
CE# to Output Delay  
OE# to Output Delay  
OE# High to Output Float (Note1)  
Output Enable Read  
MIN. 45  
CE#=OE#=VIL MAX. 45  
55  
55  
55  
30  
25  
0
70 90  
70 90  
70 90  
30 35  
25 30  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tACC  
tCE  
OE#=VIL  
CE#=VIL  
CE#=VIL  
MAX. 45  
MAX. 30  
MAX. 25  
tOE  
tDF  
tOEH  
MIN.  
MIN. 10  
CE#=OE#=VIL MIN.  
0
0
0
HoldTime  
Toggle and Data# Polling  
10  
0
10 10  
tOH  
Address to Output hold  
0
0
0
TEST CONDITIONS:  
Input pulse levels: 0V/3.0V.  
Input rise and fall times is equal to or less than 5ns.  
Outputload:1TTLgate+100pF(Includingscopeandjig),for29LV800CT/B-90.1TTL gate+30pF(Includingscope  
and jig) for 29LV800C T/B-70  
Reference levels for measuring timing: 1.5V.  
NOTES:  
1. Not 100% tested.  
2. tDF is defined as the time at which the output achieves the open circuit condition and data is no longer driven.  
P/N:PM1183  
REV. 1.4, APR. 24, 2006  
24  
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