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MX29LV800CBTI-90 参数 Datasheet PDF下载

MX29LV800CBTI-90图片预览
型号: MX29LV800CBTI-90
PDF下载: 下载PDF文件 查看货源
内容描述: 8M - BIT [ 1Mx8 / 512K X16 ] CMOS单电压3V仅限于Flash存储器 [8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY]
分类和应用: 存储
文件页数/大小: 69 页 / 784 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX29LV800C T/B  
WRITE PULSE "GLITCH" PROTECTION  
Q3  
Sector EraseTimer  
Noise pulses of less than 5ns(typical) on CE# or WE#  
will not initiate a write cycle.  
After the completion of the initial sector erase command  
sequence, the sector erase time-out will begin. Q3 will  
remain low until the time-out is complete. DATA# polling  
andToggle Bit are valid after the initial sector erase com-  
mand sequence.  
LOGICAL INHIBIT  
Writing is inhibited by holding any one of OE# = VIL,  
CE# = VIH or WE# = VIH. To initiate a write cycle CE#  
and WE# must be a logical zero while OE# is a logical  
one.  
If DATA# polling or the Toggle Bit indicates the device  
has been written with a valid erase command, Q3 may  
be used to determine if the sector erase timer window is  
still open. If Q3 is high ("1") the internally controlled  
erase cycle has begun; attempts to write subsequent  
commands to the device will be ignored until the erase  
operation is completed as indicated by DATA# polling or  
Toggle Bit. If Q3 is low ("0"), the device will accept  
additional sector erase commands. To insure the com-  
mand has been accepted, the system software should  
check the status of Q3 prior to and following each sub-  
sequent sector erase command. If Q3 were high on the  
second status check, the command may not have been  
accepted.  
POWER SUPPLY DECOUPLING  
In order to reduce power switching effect, each device  
should have a 0.1uF ceramic capacitor connected be-  
tween itsVCC and GND.  
POWER-UP SEQUENCE  
The MX29LV800CT/B powers up in the Read only mode.  
In addition, the memory contents may only be altered  
after successful completion of the predefined command  
sequences.  
DATA PROTECTION  
The MX29LV800C T/B is designed to offer protection  
against accidental erasure or programming caused by  
spurious system level signals that may exist during power  
transition. During power up the device automatically re-  
sets the state machine in the Read mode. In addition,  
with its control register architecture, alteration of the  
memory contents only occurs after successful comple-  
tion of specific command sequences. The device also  
incorporates several features to prevent inadvertent write  
cycles resulting fromVCC power-up and power-down tran-  
sition or system noise.  
TEMPORARY SECTOR UNPROTECTED  
This feature allows temporary unprotected of previously  
protected sector to change data in-system.TheTempo-  
rary Sector Unprotected mode is activated by setting  
the RESET# pin toVID(11.5V-12.5V). During this mode,  
formerly protected sectors can be programmed or erased  
as un-protected sector. Once VID is remove from the  
RESET# pin, all the previously protected sectors are  
protected again.  
LOWVCCWRITE INHIBIT  
SECTOR PROTECTION  
When VCC is less than VLKO the device does not ac-  
cept any write cycles. This protects data during VCC  
power-up and power-down.The command register and  
all internal program/erase circuits are disabled, and the  
device resets. Subsequent writes are ignored untilVCC  
is greater thanVLKO. The system must provide the proper  
signals to the control pins to prevent unintentional write  
whenVCC is greater thanVLKO.  
The MX29LV800CT/B features hardware sector protec-  
tion. This feature will disable both program and erase  
operations for these sectors protected. To activate this  
mode, the programming equipment must force VID on  
address pin A9 and OE# (suggest VID = 12V). Pro-  
gramming of the protection circuitry begins on the falling  
edge of the WE# pulse and is terminated on the rising  
edge. Please refer to sector protect algorithm and wave-  
P/N:PM1183  
REV. 1.4, APR. 24, 2006  
20  
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