欢迎访问ic37.com |
会员登录 免费注册
发布采购

MX29LV400BXBI-70 参数 Datasheet PDF下载

MX29LV400BXBI-70图片预览
型号: MX29LV400BXBI-70
PDF下载: 下载PDF文件 查看货源
内容描述: 4M- BIT [ 512K ×8 / 256K ×16 ]的CMOS单电压3V仅限于Flash存储器 [4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY]
分类和应用: 存储
文件页数/大小: 59 页 / 1217 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
 浏览型号MX29LV400BXBI-70的Datasheet PDF文件第51页浏览型号MX29LV400BXBI-70的Datasheet PDF文件第52页浏览型号MX29LV400BXBI-70的Datasheet PDF文件第53页浏览型号MX29LV400BXBI-70的Datasheet PDF文件第54页浏览型号MX29LV400BXBI-70的Datasheet PDF文件第55页浏览型号MX29LV400BXBI-70的Datasheet PDF文件第56页浏览型号MX29LV400BXBI-70的Datasheet PDF文件第57页浏览型号MX29LV400BXBI-70的Datasheet PDF文件第59页  
MX29LV400T/B  
REVISION HISTORY  
Revision No. Description  
Page  
All  
Date  
JUL/24/2001  
1.0  
Add MX29LV401T/B part number  
MX29LV401T/B tBUSY=90us for sector erase  
MX29LV400T/B tBUSY=90ns for sector erase  
Correct mis-typing  
tOE spec of 55ns speed grade was changed from 30ns to 25ns  
Separate data sheet into two files:MX29LV400T/B & MX29LV401T/B All  
P23  
P23  
P10,18,19  
P20  
1.1  
1.2  
AUG/16/2001  
SEP/14/2001  
Erase suspend spec was changed from 100us max. to 20us max.  
tOE spec of 55ns speed grade was changed from 30ns to 25ns  
tBUSY spec was changed from 90ns min. to 90ns max.  
Correct mis-typing  
Add sector protection (A9, OE control) waveform and flow chart  
Add WORD/BYTE SWITCHING spec and waveform  
1.Add chip form  
P13  
P20  
P23  
P34,36,38~40  
P35,36  
P46,47  
P53  
1.3  
1.4  
OCT/11/2001  
NOV/23/2001  
2.Correct mis-typing:Figure 22-->Figure 24  
3.Add the typical spec of tWPP1/tWPP2  
1.Wording change of sector erase commands  
2.Improve the DC VIH spec: 0.7xVCC(min.)-->2.3V(min.)  
3.Add 2nd CSP package type:6x8x1.2mm with 0.4mm ball size  
P10  
P23,39  
P10,12  
P19  
P52,53,57  
P/N:PM0710  
REV. 1.4, NOV. 23, 2001  
58  
 复制成功!