MX29LV400T/B
AC CHARACTERISTICS
TA = -40oC to 85oC, VCC = 2.7V~3.6V
(TA = 0oC to 70oC, VCC = 3.3V±5% for MX29LV400T/B-55R)
Table 11. Erase/Program Operations
29LV400T/B-55R 29LV400T/B-70
29LV400T/B-90
SYMBOL PARAMETER
MIN.
55
0
MAX. MIN.
MAX. MIN. MAX. UNIT
tWC
tAS
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
70
0
90
0
ns
ns
ns
ns
ns
ns
ns
tAH
45
35
0
45
35
0
45
45
0
tDS
tDH
Data Hold Time
tOES
tGHWL
Output Enable Setup Time
Read Recovery Time Before Write
(OE High to WE Low)
CE Setup Time
0
0
0
0
0
0
tCS
0
0
0
ns
ns
ns
ns
us
tCH
CE Hold Time
0
0
0
tWP
tWPH
Write Pulse Width
35
35
30
35
Write Pulse Width High
30
30
tWHWH1 ProgrammingOperation(Note2)
(Byte/Wordprogramtime)
9/11(Typ.)
9/11(Typ.)
9/11(Typ.)
tWHWH2 Sector Erase Operation (Note 2)
0.7(Typ.)
0.7(Typ.)
0.7(Typ.)
sec
us
tVCS
tRB
VCC Setup Time (Note 1)
50
0
50
0
50
0
Recovery Time from RY/BY
Program/Erase Vaild to RY/BY Delay
ns
tBUSY
tWPP1
90
90
90
ns
Write Pulse Width for Sector Protect 100ns
(A9, OE Control)
10us
(Typ.)
100ns
10us
(Typ.)
100ns 10us
(Typ.)
tWPP2
Write Pulse Width for Sector Unprotect100ns
(A9, OE Control)
12ms 100ns
(Typ.)
12ms 100ns 12ms
(Typ.) (Typ.)
NOTES:
1. Not 100% tested.
2.See the "Erase and Programming Performance" section for more information.
P/N:PM0710
REV. 1.4, NOV. 23, 2001
23
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