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MX29LV160CBTC-70G 参数 Datasheet PDF下载

MX29LV160CBTC-70G图片预览
型号: MX29LV160CBTC-70G
PDF下载: 下载PDF文件 查看货源
内容描述: 16M - BIT [ 2Mx8 / 1Mx16 ] CMOS单电压3V仅限于Flash存储器 [16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY]
分类和应用: 闪存存储内存集成电路光电二极管ISM频段
文件页数/大小: 66 页 / 923 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX29LV160C T/B  
ERASE AND PROGRAMMING PERFORMANCE (1)  
LIMITS  
PARAMETER  
MIN.  
TYP.(2)  
0.7  
15  
MAX.(3)  
15  
UNITS  
sec  
Sector Erase Time  
Chip Erase Time  
30  
sec  
Byte Programming Time  
Word Programming Time  
Chip Programming Time  
9
300  
360  
54  
us  
11  
us  
Byte Mode  
Word Mode  
18  
sec  
12  
36  
sec  
Erase/Program Cycles  
100,000  
Cycles  
Note: 1. Not 100% Tested, Excludes external system level over head.  
2.Typical values measured at 25° C, 3V.  
3. Maximum values measured at 85° C, 2.7V, 100,000 cycles.  
LATCH-UP CHARACTERISTICS  
MIN.  
-1.0V  
MAX.  
Input Voltage with respect to GND on all pins except I/O pins  
Input Voltage with respect to GND on all I/O pins  
VCC Current  
12.5V  
VCC + 1.0V  
+100mA  
-1.0V  
-100mA  
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.  
P/N:PM1186  
REV. 1.2, JAN. 19, 2006  
55  
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