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MX29LV040CTC-70G 参数 Datasheet PDF下载

MX29LV040CTC-70G图片预览
型号: MX29LV040CTC-70G
PDF下载: 下载PDF文件 查看货源
内容描述: 4M- BIT [ 512K ×8 ] CMOS单电压3V只相当于行业FLASH MEMORY [4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 52 页 / 485 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX29LV040C  
The single cycle Query command is valid only when the  
device is in the Read mode, including Erase Suspend,  
Standby mode, and Read ID mode;however, it is ignored  
otherwise.  
QUERY COMMAND AND COMMON FLASH  
INTERFACE (CFI) MODE ( for MX29LV040C)  
MX29LV040C is capable of operating in the CFI mode.  
This mode all the host system to determine the manu-  
facturer of the device such as operating parameters and  
configuration.Two commands are required in CFI mode.  
Query command of CFI mode is placed first, then the  
Reset command exits CFI mode.These are described in  
Table 15.  
The Reset command exits from the CFI mode to the  
Read mode, or Erase Suspend mode, or read ID mode.  
The command is valid only when the device is in the CFI  
mode.  
TABLE 15-1. CFI mode: Identification Data Values  
(All values in these tables are in hexadecimal)  
Description  
Address  
Data  
(ByteMode)  
Query-unique ASCII string "QRY"  
20  
22  
24  
26  
28  
2A  
2C  
2E  
30  
32  
34  
0051  
0052  
0059  
0002  
0000  
0040  
0000  
0000  
0000  
0000  
0000  
Primary vendor command set and control interface ID code  
Address for primary algorithm extended query table  
Alternate vendor command set and control interface ID code (none)  
Address for secondary algorithm extended query table (none)  
TABLE 15-2. CFI Mode: System Interface Data Values  
(All values in these tables are in hexadecimal)  
Description  
Address  
Data  
(ByteMode)  
VCC supply, minimum (2.7V)  
36  
38  
3A  
3C  
3E  
40  
42  
44  
46  
48  
4A  
4C  
0027  
0036  
0000  
0000  
0004  
0000  
000A  
0000  
0005  
0000  
0004  
0000  
VCC supply, maximum (3.6V)  
VPP supply, minimum (none)  
VPP supply, maximum (none)  
Typical timeout for single word/byte write (2N us)  
Typical timeout for Minimum size buffer write (2N us)  
Typical timeout for individual block erase (2N ms)  
Typical timeout for full chip erase (2N ms)  
Maximum timeout for single word/byte write times (2N X Typ)  
Maximum timeout for buffer write times (2N X Typ)  
Maximum timeout for individual block erase times (2N X Typ)  
Maximum timeout for full chip erase times (not supported)  
P/N:PM1149  
REV. 1.3, APR. 24, 2006  
45  
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