MX29LV040C
Table 12. ERASE AND PROGRAMMING PERFORMANCE (1)
LIMITS
PARAMETER
MIN.
TYP.(2)
MAX.(3)
15
UNITS
sec
Sector Erase Time
Chip Erase Time
0.7
4
32
sec
Byte Programming Time
Chip Programming Time
Erase/Program Cycles
9
300
us
4.5
13.5
sec
100,000
Cycles
Note: 1.Not 100% Tested, Excludes external system level over head.
2.Typical values measured at 25°C, 3V.
3.Maximum values measured at 25°C, 2.7V.
Table 13. LATCH-UP CHARACTERISTICS
MIN.
-1.0V
MAX.
Input Voltage with respect to GND on all pins except I/O pins
Input Voltage with respect to GND on all I/O pins
Current
12.5V
VCC + 1.0V
+100mA
-1.0V
-100mA
Includes all pins except Vcc. Test conditions: VCC = 3.0V, one pin at a time.
Table 14. DATA RETENTION
Parameter Description
Test Conditions
150°C
Min
10
Unit
Years
Years
Data Retention Time
125°C
20
P/N:PM1149
REV. 1.3, APR. 24, 2006
44
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