欢迎访问ic37.com |
会员登录 免费注册
发布采购

MX29LV040CTC-70G 参数 Datasheet PDF下载

MX29LV040CTC-70G图片预览
型号: MX29LV040CTC-70G
PDF下载: 下载PDF文件 查看货源
内容描述: 4M- BIT [ 512K ×8 ] CMOS单电压3V只相当于行业FLASH MEMORY [4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 52 页 / 485 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
 浏览型号MX29LV040CTC-70G的Datasheet PDF文件第23页浏览型号MX29LV040CTC-70G的Datasheet PDF文件第24页浏览型号MX29LV040CTC-70G的Datasheet PDF文件第25页浏览型号MX29LV040CTC-70G的Datasheet PDF文件第26页浏览型号MX29LV040CTC-70G的Datasheet PDF文件第28页浏览型号MX29LV040CTC-70G的Datasheet PDF文件第29页浏览型号MX29LV040CTC-70G的Datasheet PDF文件第30页浏览型号MX29LV040CTC-70G的Datasheet PDF文件第31页  
MX29LV040C  
Figure 7. CE# CONTROLLED PROGRAM TIMING WAVEFORM  
PA for program  
555 for program  
2AA for erase  
SA for sector erase  
555 for chip erase  
Data# Polling  
Address  
PA  
tWC  
tWH  
tAS  
tAH  
WE#  
OE#  
tGHEL  
tCP  
tWHWH1 or 2  
CE#  
Data  
tWS  
tDS  
tCPH  
tDH  
DOUT  
Q7  
PD for program  
30 for sector erase  
10 for chip erase  
A0 for program  
55 for erase  
NOTES:  
1.PA=Program Address, PD=Program Data, DOUT=Data Out, Q7=complement of data written to device.  
2.Figure indicates the last two bus cycles of the command sequence.  
P/N:PM1149  
REV. 1.3, APR. 24, 2006  
27  
 复制成功!