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MX29LV640MLTC-90 参数 Datasheet PDF下载

MX29LV640MLTC-90图片预览
型号: MX29LV640MLTC-90
PDF下载: 下载PDF文件 查看货源
内容描述: 64M - BIT单电压3V ONLY制服行业的FLASH MEMORY [64M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 70 页 / 540 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX29LV64xM H/L  
The single cycle Query command is valid only when the  
device is in the Read mode, including Erase Suspend,  
Standby mode, and Read ID mode;however, it is ignored  
otherwise.  
QUERY COMMAND AND COMMON FLASH  
INTERFACE (CFI) MODE  
MX29LV64xM H/L is capable of operating in the CFI mode.  
This mode all the host system to determine the manu-  
facturer of the device such as operating parameters and  
configuration.Two commands are required in CFI mode.  
Query command of CFI mode is placed first, then the  
Reset command exits CFI mode.These are described in  
Table 4.  
The Reset command exits from the CFI mode to the  
Read mode, or Erase Suspend mode, or read ID mode.  
The command is valid only when the device is in the CFI  
mode.  
Table 4-1. CFI mode: Identification Data Values  
(All values in these tables are in hexadecimal)  
Description  
Addressh Addressh  
Datah  
(x16)  
10  
(x8)  
20  
22  
24  
26  
28  
2A  
2C  
2E  
30  
32  
34  
Query-unique ASCII string "QRY"  
0051  
0052  
0059  
0002  
0000  
0040  
0000  
0000  
0000  
0000  
0000  
11  
12  
Primary vendor command set and control interface ID code  
Address for primary algorithm extended query table  
13  
14  
15  
16  
Alternate vendor command set and control interface ID code (none)  
Address for secondary algorithm extended query table (none)  
17  
18  
19  
1A  
Table 4-2. CFI Mode: System Interface Data Values  
Description  
Addressh Addressh  
Datah  
(x16)  
1B  
1C  
1D  
1E  
1F  
20  
(x8)  
36  
VCC supply, minimum (2.7V)  
0027  
0036  
0000  
0000  
0007  
0007  
000A  
0000  
0001  
0005  
0004  
0000  
VCC supply, maximum (3.6V)  
38  
VPP supply, minimum (none)  
3A  
3C  
3E  
40  
VPP supply, maximum (none)  
Typical timeout for single word/byte write (2N us)  
Typical timeout for maximum size buffer write (2N us)  
Typical timeout for individual block erase (2N ms)  
Typical timeout for full chip erase (2N ms)  
Maximum timeout for single word/byte write times (2N X Typ)  
Maximum timeout for maximum size buffer write times (2N X Typ)  
Maximum timeout for individual block erase times (2N X Typ)  
Maximum timeout for full chip erase times (not supported)  
21  
42  
22  
44  
23  
46  
24  
48  
25  
4A  
4C  
26  
P/N:PM1093  
REV. 1.1, AUG. 11, 2005  
24  
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